生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-XUFM-X24 |
Reach Compliance Code: | unknown | 风险等级: | 5.81 |
Is Samacsys: | N | 最大集电极电流 (IC): | 50 A |
集电极-发射极最大电压: | 600 V | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X24 | 元件数量: | 1 |
端子数量: | 24 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 最大功率耗散 (Abs): | 200 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | VCEsat-Max: | 2.7 V |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
MIG50Q201H | TOSHIBA | High Power Switching Applications Motor Control Applications |
获取价格 |
|
MIG50Q6CSB1X | TOSHIBA | TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
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|
MIG50Q7CSA0X | TOSHIBA | TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT |
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|
MIG50Q7CSB1X | TOSHIBA | High Power Switching Applications Motor Control Applications |
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|
MIG5Q805H | TOSHIBA | TRANSISTOR 5 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor |
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|
MIG600J2CMB1W | TOSHIBA | Intelligent Power Module Silicon N Channel IGBT |
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