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DF3D6.8MFV(TL3,T) PDF预览

DF3D6.8MFV(TL3,T)

更新时间: 2024-02-17 16:07:30
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
8页 248K
描述
Protection Diodes against ESD

DF3D6.8MFV(TL3,T) 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.75二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
Base Number Matches:1

DF3D6.8MFV(TL3,T) 数据手册

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DF3D6.8MFV  
ESD Protection Diodes Silicon Epitaxial Planar  
DF3D6.8MFV  
1. Applications  
ESD Protection  
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other  
purpose, including, but not limited to, voltage regulation.  
2. Packaging and Internal Circuit  
1: I/O 1  
2: I/O 2  
3: GND  
VESM  
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)  
Characteristics  
Symbol  
Rating  
Unit  
Electrostatic discharge voltage (IEC61000-4-2)(Contact)  
Junction temperature  
VESD  
Tj  
±8  
150  
kV  
Storage temperature  
Tstg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
2012-09-12  
Rev.3.0  
1

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