2SK3569

更新时间： 2024-02-19 08:12:54

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管开关脉冲局域网
页数	文件大小	规格书
6页	153K
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

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技术参数
数据手册

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2SK3569 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.58	Base Number Matches：	1

2SK3569 数据手册

2SK3569

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3569

Switching Regulator Applications

Unit: mm

•

Low drain-source ON resistance: R = 0.54Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 8.5S (typ.)

Low leakage current: I

= 100 μA (V

= 600 V)

DSS

Enhancement-mode: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

600

±30

DSS

DGR

GSS

Drain-gate voltage (R

= 20 kΩ)

Gate-source voltage

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

1: Gate

2: Drain

3: Source

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

363

(Note 2)

Avalanche current

4.5

JEDEC

JEITA

―

Repetitive avalanche energy (Note 3)

Channel temperature

°C

SC-67

2-10U1B

Weight : 1.7 g (typ.)

150

TOSHIBA

Storage temperature range

-55~150

stg

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

2.78

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: V = 90 V, T = 25°C(initial), L = 6.36 mH, I = 10 A, R = 25 Ω

DD ch

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2004-03-04

12 3 4 5 6

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