是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | SC-67 | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.32 | 雪崩能效等级(Eas): | 595 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 900 V | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 2.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 15 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SK3565_06 | TOSHIBA | Silicon N Channel MOS Type Switching Regulator Applications |
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2SK3565_09 | TOSHIBA | Switching Regulator Applications |
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2SK3566 | HITACHI | Silicon N-Channel MOS FET, High Speed Power Switching |
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2SK3566 | TOSHIBA | Silicon N Channel MOS Type Switching Regulator Applications |
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|
2SK3566(Q) | TOSHIBA | 暂无描述 |
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|
2SK3566_10 | TOSHIBA | Switching Regulator Applications |
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