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2SK3565 PDF预览

2SK3565

更新时间: 2024-01-11 23:02:32
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管场效应晶体管开关脉冲局域网
页数 文件大小 规格书
3页 314K
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?)

2SK3565 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-67包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.32雪崩能效等级(Eas):595 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (ID):5 A
最大漏源导通电阻:2.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):15 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK3565 数据手册

 浏览型号2SK3565的Datasheet PDF文件第2页浏览型号2SK3565的Datasheet PDF文件第3页 
TENTATIVE  
2SK3565  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)  
2SK3565  
unit:mm  
Switching Regulator Applications  
10±0.3  
2.7±0.2  
φ3.2±0.2  
Low drain-source ON resistance: R  
High forward transfer admittance: |Y | = 4.5 S (typ.)  
= 2.0Ω (typ.)  
DS (ON)  
fs  
Low leakage current: I  
= 100 μA (V  
= 720 V)  
DS  
DSS  
Enhancement-mode: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Maximum Ratings (Ta = 25°C)  
1.1  
1.1  
Characteristics  
Symbol  
Rating  
Unit  
0.69±0.15  
2.54±0.25  
Drain-source voltage  
V
900  
900  
±30  
5
V
V
V
DSS  
2.54±0.25  
Drain-gate voltage (R  
Gate-source voltage  
= 20 k)  
V
GS  
DGR  
V
1 2 3  
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (t = 1 ms)  
I
15  
45  
DP  
(Note 1)  
1. Gate  
Drain power dissipation (Tc = 25°C)  
2. Drain  
P
W
D
AS  
AR  
3. Source  
Single pulse avalanche energy  
E
595  
mJ  
(Note 2)  
Avalanche current  
I
5
4.5  
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
JEDEC  
T
150  
ch  
Storage temperature range  
T
-55~150  
stg  
JEITA  
TOSHIBA  
Thermal Characteristics  
2
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
2.78  
62.5  
°C/W  
°C/W  
th (ch-c)  
th (ch-a)  
Note 1: Please use devices on conditions that the channel temperature is below 150°C.  
Note 2: = 90 V, T = 25°C, L = 43.6 mH, I = 5.0 A, R = 25 Ω  
1
V
DD  
ch  
AR  
G
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
3
1
2002-12-11  

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