2SK3563

更新时间： 2024-02-02 15:53:36

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管开关脉冲局域网
页数	文件大小	规格书
3页	320K
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?)

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技术参数
数据手册

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2SK3563 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.59	Base Number Matches：	1

2SK3563 数据手册

TENTATIVE

2SK3563

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ)

2SK3563

unit：ｍｍ

Switching Regulator Applications

10±0.3

2.7±0.2

φ3.2±0.2

•

Low drain-source ON resistance: R

High forward transfer admittance: |Y | = 3.5S (typ.)

= 1.35Ω (typ.)

DS (ON)

Low leakage current: I

= 100 μA (V

= 500 V)

DSS

Enhancement-mode: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Maximum Ratings (Ta = 25°C)

1.1

Characteristics

Symbol

Rating

Unit

0.69±0.15

2.54±0.25

Drain-source voltage

500

±30

DSS

2.54±0.25

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

2 3

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

1. Gate

2. Drain

3. Source

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

180

(Note 2)

Avalanche current

3.5

Repetitive avalanche energy (Note 3)

Channel temperature

°C

JEDEC

―

150

Storage temperature range

-55~150

stg

JEITA

TOSHIBA

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.57

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: = 90 V, T = 25°C(initial), L = 12.2 mH, I = 5 A, R = 25 Ω

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2003-01-27

12 3

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