生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.62 | Is Samacsys: | N |
雪崩能效等级(Eas): | 292 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 16 A | 最大漏极电流 (ID): | 16 A |
最大漏源导通电阻: | 0.32 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 60 W | 最大脉冲漏极电流 (IDM): | 64 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ412(SM) | TOSHIBA | 暂无描述 |
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|
2SJ412_09 | TOSHIBA | DC-DC Converter, Relay Drive and Motor Drive Applications |
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|
2SJ413 | SANYO | Ultrahigh-Speed Switching Applications |
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|
2SJ414 | SANYO | General-Purpose Switching Device Applications |
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|
2SJ415 | SANYO | General-Purpose Switching Device Applications |
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|
2SJ416 | SANYO | Ultrahigh-Speed Switching Applications |
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