生命周期: | Transferred | 包装说明: | 2-4E1B, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.31 | Is Samacsys: | N |
配置: | SINGLE | FET 技术: | JUNCTION |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ105GR | ETC | TRANSISTOR | JFET | P-CHANNEL | 2.6MA I(DSS) | SPAK |
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2SJ105-GR | TOSHIBA | 暂无描述 |
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2SJ105Y | ETC | TRANSISTOR | JFET | P-CHANNEL | 1.2MA I(DSS) | SPAK |
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2SJ105-Y | TOSHIBA | TRANSISTOR P-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1B, 3 PIN, FET General Purpose Small Sig |
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2SJ106 | TOSHIBA | P CHANNEL JUNCTION TYPE (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
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2SJ106/161/162 | HITACHI | Silicon P-Channel MOS FET |
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