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2SA1163-BL,LF

更新时间: 2024-01-06 04:17:22
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东芝 - TOSHIBA 晶体放大器小信号双极晶体管光电二极管
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2SA1163-BL,LF 数据手册

 浏览型号2SA1163-BL,LF的Datasheet PDF文件第2页浏览型号2SA1163-BL,LF的Datasheet PDF文件第3页浏览型号2SA1163-BL,LF的Datasheet PDF文件第4页 
2SA1163  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1163  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
High voltage: V  
= 120 V  
CEO  
Excellent h  
linearity: h  
(I = 0.1 mA)/h  
(I = 2 mA)  
C
FE  
FE  
C
FE  
= 0.95 (typ.)  
= 200~700  
Low noise: NF = 1dB (typ.), 10dB (max)  
Complementary to 2SC2713  
Small package  
High h  
h
FE: FE  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
120  
120  
5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
20  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
150  
C
T
j
125  
T
stg  
55~125  
JEDEC  
JEITA  
TO-236MOD  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
SC-59  
TOSHIBA  
2-3F1A  
Weight: 0.012 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −120 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
0.1  
0.1  
μA  
μA  
CBO  
CB  
EB  
E
I
= −5 V, I = 0  
C
EBO  
h
FE  
(Note)  
DC current gain  
V
= −6 V, I = −2 mA  
200  
700  
CE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= −10 mA, I = −1 mA  
100  
4
0.3  
V
CE (sat)  
C
B
f
V
V
V
= −6 V, I = −1 mA  
MHz  
pF  
T
CE  
CB  
CE  
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
ob  
E
= −6 V, I = −0.1 mA, f = 1 kHz,  
C
Noise figure  
NF  
1.0  
10  
dB  
Rg = 10 kΩ,  
Note: h classification GR (G): 200~400, BL (L): 350~700  
FE  
(
) marking symbol  
Marking  
1
2007-11-01  

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