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2SA1015-GR(F,T) PDF预览

2SA1015-GR(F,T)

更新时间: 2024-02-15 05:22:41
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体放大器小信号双极晶体管驱动
页数 文件大小 规格书
3页 111K
描述
TRANS PNP 50V 150MA TO-92

2SA1015-GR(F,T) 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.6最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SA1015-GR(F,T) 数据手册

 浏览型号2SA1015-GR(F,T)的Datasheet PDF文件第2页浏览型号2SA1015-GR(F,T)的Datasheet PDF文件第3页 
                                                        
                                                        
                                                                     
                                                                     
2SA1015(L)  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1015(L)  
Audio Frequency Amplifier Applications  
Unit: mm  
Low Noise Amplifier Applications  
·
·
High voltage and high current: V  
= 50 V (min),  
CEO  
= −150 mA (max)  
I
C
Excellent h  
FE  
linearity: h  
: h  
(2) = 80 (typ.) at V = 6 V, I = −150 mA  
(I = 0.1 mA)/h  
Low noise: NF = 0.2dB (typ.) (f = 1 kHz)  
FE  
FE  
CE C  
(I = 2 mA) = 0.95 (typ.)  
C
C
FE  
·
·
Complementary to 2SC1815 (L)  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
-50  
-50  
V
V
CBO  
CEO  
EBO  
-5  
V
I
-150  
-50  
mA  
mA  
mW  
°C  
°C  
C
JEDEC  
JEITA  
TO-92  
SC-43  
2-5F1B  
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
400  
C
TOSHIBA  
T
125  
j
T
-55~125  
Weight: 0.21 g (typ.)  
stg  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
= -50 V, I = 0  
¾
¾
¾
¾
-0.1  
-0.1  
mA  
mA  
CBO  
CB  
EB  
E
I
= -5 V, I = 0  
C
EBO  
h
FE (1)  
V
= -6 V, I = -2 mA  
70  
¾
400  
CE  
CE  
C
DC current gain  
(Note)  
h
V
= -6 V, I = -150 mA  
25  
¾
¾
80  
80  
-0.1  
¾
¾
-0.3  
-1.1  
¾
FE (2)  
C
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
V
V
I
I
= -100 mA, I = -10 mA  
V
V
CE (sat)  
C
C
B
= -100 mA, I = -10 mA  
BE (sat)  
B
f
V
V
= -10 V, I = -1 mA  
¾
MHz  
T
CE  
C
= -10 V, I = 0  
CB  
E
Collector output capacitance  
Base intrinsic resistance  
C
¾
¾
¾
¾
4
7
¾
6
pF  
ob  
f = 1 MHz  
V
= -10 V, I = 1 mA  
CB  
E
r
bb’  
30  
0.5  
0.2  
W
f = 30 MHz  
V
= -6 V, I = -0.1 mA  
CE  
C
NF (1)  
NF (2)  
f = 100 Hz, R = 10 kW  
G
Noise figure  
dB  
V
= -6 V, I = -0.1 mA  
C
CE  
3
f = 1 kHz, R = 10 kW  
G
Note: h  
classification O: 70~140, Y: 120~240, GR: 200~400  
FE (1)  
1
2003-03-27  

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