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015AZ9.1-Z(TPH3,F) PDF预览

015AZ9.1-Z(TPH3,F)

更新时间: 2024-02-17 15:47:36
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
6页 497K
描述
Zener Diode

015AZ9.1-Z(TPH3,F) 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.74二极管类型:ZENER DIODE
Base Number Matches:1

015AZ9.1-Z(TPH3,F) 数据手册

 浏览型号015AZ9.1-Z(TPH3,F)的Datasheet PDF文件第2页浏览型号015AZ9.1-Z(TPH3,F)的Datasheet PDF文件第3页浏览型号015AZ9.1-Z(TPH3,F)的Datasheet PDF文件第4页浏览型号015AZ9.1-Z(TPH3,F)的Datasheet PDF文件第5页浏览型号015AZ9.1-Z(TPH3,F)的Datasheet PDF文件第6页 
015AZ2.0~015AZ24  
TOSHIBA Diode Silicon Epitaxial Planar Type  
015AZ2.0~015AZ24  
Constant-Voltage Regulation Applications  
Unit: mm  
z Small package  
z Nominal voltage tolerance of about ±2.5%  
(2.0 V~24 V)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Power dissipation  
Symbol  
Rating  
Unit  
P*  
150  
125  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
JEDEC  
JEITA  
TOSHIBA  
1-1G1A  
* Mounted on a glass-epoxy circuit board of 20 × 20 mm,  
Pad dimensions of 4 × 4 mm.  
Weight: 1.4 mg (typ.)  
Electrical Characteristics  
(See pages 2~3.)  
Marking  
VZ additional ranking  
upper --- X rank , middle --- Y rank , lower --- Z rank  
Voltage rank  
24  
Decimal point  
z : VZ = (VZ ranking voltage) X 0.1, nil: VZ = VZ ranking  
Example 1: 015AZ2.4-X  
24  
Example 2: 015AZ2.4-Z  
24  
Example 3: 015AZ12-X  
12  
Pin Assignment (Top View)  
1
2007-11-01  

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