Datasheet > XBS306S17R-G

XBS306S17R-G

更新时间： 2022-05-08 16:26:10

品牌	Logo	应用领域
特瑞仕 - TOREX		二极管
页数	文件大小	规格书
3页	105K
描述
Schottky Barrier Diode, 3A, 60V Type

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XBS306S17R-G 数据手册

XBS306S17R-G

Schottky Barrier Diode, 3A, 60V Type

■FEATURES

ETR1616-002a

■APPLICATIONS

●Rectification

Forward Voltage

: V_F=0.59V (TYP.)

Forward Current

: I_F(AVE)=3A

●Protection against reverse connection of battery

Repetitive Peak Reverse Voltage : V_RM=60V

■PACKAGING INFORMATION

■ABSOLUTE MAXIMUM RATINGS

Ta=25℃

PARAMETER

SYMBOL

VRM

RATINGS

UNIT

Repetitive Peak Reverse Voltage

Reverse Voltage (DC)

Forward Current (Average)

Non Continuous

Forward Surge Current^*1

IF(AVE)

IFSM

Junction Temperature

125

℃

Storage Temperature Range

Tstg

-55～+150

*1： Non continuous high amplitude 60Hz half-sine wave.

■MARKING RULE

Cathode Bar

①②③④⑤⑥: 306S17(Product Number)

⑦⑧

: Assembly Lot Number

Unit: mm

SMA

■PRODUCT NAME

PRODUCT NAME

DEVICE ORIENTATION

XBS306S17 R-G

XBS306S17 R

SMA (Halogen & Antimony free)

SMA

* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.

* The device orientation is fixed in its embossed tape pocket.

■ELECTRICAL CHARACTERISTICS

Ta=25℃

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

MIN.

TYP.

0.145

0.59

MAX.

VF1

VF2

IR1

IR2

I_F=200μA

I_F=3A

Forward Voltage

0.66

V_R=30V

V_R=60V

μA

Reverse Current

300

Inter-Terminal Capacity

Reverse Recovery Time^*2

*2：trr measurement circuit

V_R=1V , f=1MHz

195

trr

I_F=I_R=10mA , irr=1mA

Bias

Device Under test

Pulse Generatrix

Oscilloscope

1/3

12 3

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