XBS104V14R-G

更新时间： 2024-01-23 00:30:34

品牌	Logo	应用领域
特瑞仕 - TOREX		整流二极管
页数	文件大小	规格书
3页	95K
描述
Schottky Barrier Diode, 1A, 40V Type

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技术参数
数据手册

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XBS104V14R-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	1.71
Is Samacsys：	N	配置：	SINGLE
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	0.315 V
最大非重复峰值正向电流：	20 A	元件数量：	1
最高工作温度：	125 °C	最大输出电流：	1 A
最大重复峰值反向电压：	40 V	子类别：	Rectifier Diodes
表面贴装：	YES	技术：	SCHOTTKY
Base Number Matches：	1

XBS104V14R-G 数据手册

XBS104V14R-G

ETR1610-002

Schottky Barrier Diode, 1A, 40V Type

■FEATURES

■APPLICATIONS

●Rectification

Forward Voltage

: V_F=0.365V (TYP.)

: I_F(AV)=1A

●Protection against reverse connection of battery

Forward Current

Repetitive Peak Reverse Voltage

Environmentally Friendly

: V_RM=40V

: EU RoHS Compliant, Pb Free

■PACKAGING INFORMATION

■ABSOLUTE MAXIMUM RATINGS

Ta=25℃

PARAMETER

SYMBOL

RATINGS

UNIT

Repetitive Peak Reverse Voltage

Reverse Voltage (DC)

VRM

Forward Current (Average)

Non Continuous

Forward Surge Current^*1

IF(AV)

IFSM

Junction Temperature

125

℃

Storage Temperature Range

Tstg

-55～+150

*1： Non continuous high amplitude 60Hz half-sine wave.

* When the IC is operated continuously under high load conditions such as high temperature,

high current and high voltage, it may have the case that reliability reduces drastically even if

under the absolute maximum ratings. Adequate “Derating” should be taken into

consideration while designing.

Cathode Bar

■MARKING RULE

SOD-123A

Unit : mm

①: 0 (Product Number)

②: Assembly Lot Number

■PRODUCT NAME

PRODUCT NAME

XBS104V14R-G

XBS104V14R

DEVICE ORIENTATION

SOD-123A(Halogen & Antimony free)

SOD-123A

* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.

* The device orientation is fixed in its embossed tape pocket.

■ELECTRICAL CHARACTERISTICS

Ta=25℃

LIMITS

TYP.

0.23

0.30

0.365

0.25

150

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

MIN.

MAX.

0.315

0.385

0.41

VF1

VF2

VF3

I_F=100mA

I_F=500mA

I_F=1A

Forward Voltage

Reverse Current

V_R=40V

Inter-Terminal Capacity

Reverse Recovery Time^*2

*2：trr measurement circuit

V_R=1V , f=1MHz

trr

I_F=I_R=10mA , irr=1mA

Bias

Device Under test

Pulse Generatrix

Oscilloscope

1/3

12 3

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