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XBS104V14 PDF预览

XBS104V14

更新时间: 2024-02-29 19:27:02
品牌 Logo 应用领域
特瑞仕 - TOREX 二极管
页数 文件大小 规格书
3页 73K
描述
Schottky Barrier Diode, 1A, 40V Type

XBS104V14 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:1.71
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.315 V
最大非重复峰值正向电流:20 A元件数量:1
最高工作温度:125 °C最大输出电流:1 A
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
Base Number Matches:1

XBS104V14 数据手册

 浏览型号XBS104V14的Datasheet PDF文件第2页浏览型号XBS104V14的Datasheet PDF文件第3页 
XBS104V14  
ETR1610-001  
Schottky Barrier Diode, 1A, 40V Type  
FEATURES  
APPLICATIONS  
Rectification  
Forward Voltage  
: VF=0.365V (TYP.)  
: IF(AV)=1A  
Protection against reverse connection of battery  
Forward Current  
Repetitive Peak Reverse Voltage : VRM=40V  
PACKAGING INFORMATION  
ABSOLUTE MAXIMUM RATINGS  
Ta=25℃  
PARAMETER  
SYMBOL  
VRM  
RATINGS  
UNIT  
Repetitive Peak Reverse Voltage  
Reverse Voltage (DC)  
40  
40  
1
V
V
A
VR  
Forward Current (Average)  
Non Continuous  
Forward Surge Current*1  
IF(AV)  
IFSM  
20  
A
Junction Temperature  
Tj  
125  
Storage Temperature Range  
Tstg  
-55+150  
*1Non continuous high amplitude 60Hz half-sine wave.  
* When the IC is operated continuously under high load conditions such as high temperature,  
high current and high voltage, it may have the case that reliability reduces drastically even if  
under the absolute maximum ratings. Adequate “Derating” should be taken into  
consideration while designing.  
Cathode Bar  
MARKING RULE  
SOD-123A  
Unit : mm  
: 0 (Product Number)  
: Assembly Lot Number  
PRODUCT NAME  
PRODUCT NAME  
DEVICE ORIENTATION  
XBS104V14*  
R
: Embossed tape, standard feed  
* Please put the device orientation type “R”.  
ELECTRICAL CHARACTERISTICS  
Ta=25℃  
LIMITS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNIT  
MIN.  
TYP.  
0.23  
0.30  
0.365  
0.25  
150  
MAX.  
0.315  
0.385  
0.41  
2
VF1  
VF2  
VF3  
IR  
IF=100mA  
-
-
-
-
-
-
V
V
Forward Voltage  
IF=500mA  
IF=1A  
V
Reverse Current  
VR=40V  
mA  
pF  
ns  
Inter-Terminal Capacity  
Reverse Recovery Time*2  
Ct  
VR=1V , f=1MHz  
IF=IR=10mA , irr=1mA  
-
trr  
41  
-
*2trr measurement circuit  
Device Under test  
Bias  
Pulse Generatrix  
Oscilloscope  
1/3  

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