Datasheet > XBS104V14_12

XBS104V14_12

更新时间： 2022-05-08 16:26:04

品牌	Logo	应用领域
特瑞仕 - TOREX		二极管
页数	文件大小	规格书
3页	95K
描述
Schottky Barrier Diode, 1A, 40V Type

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XBS104V14_12 数据手册

XBS104V14R-G

ETR1610-002

Schottky Barrier Diode, 1A, 40V Type

■FEATURES

■APPLICATIONS

●Rectification

Forward Voltage

: V_F=0.365V (TYP.)

: I_F(AV)=1A

●Protection against reverse connection of battery

Forward Current

Repetitive Peak Reverse Voltage

Environmentally Friendly

: V_RM=40V

: EU RoHS Compliant, Pb Free

■PACKAGING INFORMATION

■ABSOLUTE MAXIMUM RATINGS

Ta=25℃

PARAMETER

SYMBOL

RATINGS

UNIT

Repetitive Peak Reverse Voltage

Reverse Voltage (DC)

VRM

Forward Current (Average)

Non Continuous

Forward Surge Current^*1

IF(AV)

IFSM

Junction Temperature

125

℃

Storage Temperature Range

Tstg

-55～+150

*1： Non continuous high amplitude 60Hz half-sine wave.

* When the IC is operated continuously under high load conditions such as high temperature,

high current and high voltage, it may have the case that reliability reduces drastically even if

under the absolute maximum ratings. Adequate “Derating” should be taken into

consideration while designing.

Cathode Bar

■MARKING RULE

SOD-123A

Unit : mm

①: 0 (Product Number)

②: Assembly Lot Number

■PRODUCT NAME

PRODUCT NAME

XBS104V14R-G

XBS104V14R

DEVICE ORIENTATION

SOD-123A(Halogen & Antimony free)

SOD-123A

* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.

* The device orientation is fixed in its embossed tape pocket.

■ELECTRICAL CHARACTERISTICS

Ta=25℃

LIMITS

TYP.

0.23

0.30

0.365

0.25

150

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

MIN.

MAX.

0.315

0.385

0.41

VF1

VF2

VF3

I_F=100mA

I_F=500mA

I_F=1A

Forward Voltage

Reverse Current

V_R=40V

Inter-Terminal Capacity

Reverse Recovery Time^*2

*2：trr measurement circuit

V_R=1V , f=1MHz

trr

I_F=I_R=10mA , irr=1mA

Bias

Device Under test

Pulse Generatrix

Oscilloscope

1/3

12 3

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