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XBS104S13R PDF预览

XBS104S13R

更新时间: 2024-02-12 00:06:35
品牌 Logo 应用领域
特瑞仕 - TOREX 二极管
页数 文件大小 规格书
3页 97K
描述
Schottky Barrier Diode, 1A, 40V Type

XBS104S13R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.5配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.54 VJESD-30 代码:R-PDSO-G2
最大非重复峰值正向电流:10 A元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:40 V
最大反向恢复时间:0.025 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

XBS104S13R 数据手册

 浏览型号XBS104S13R的Datasheet PDF文件第2页浏览型号XBS104S13R的Datasheet PDF文件第3页 
XBS104S13R-G  
Schottky Barrier Diode, 1A, 40V Type  
FEATURES  
ETR1608-003  
APPLICATIONS  
Rectification  
Forward Voltage  
: VF=0.49V (TYP.)  
Protection against reverse connection of battery  
Forward Current  
: IF(AV)=1A  
Repetitive Peak Reverse Voltage : VRM=40V  
Environmentally Friendly  
: EU RoHS Compliant, Pb Free  
PACKAGING INFORMATION  
ABSOLUTE MAXIMUM RATINGS  
Ta=25℃  
PARAMETER  
SYMBOL  
VRM  
RATINGS  
UNIT  
Repetitive Peak Reverse Voltage  
Reverse Voltage (DC)  
40  
40  
1
V
V
A
VR  
Forward Current (Average)  
Non Continuous  
Forward Surge Current *1  
IF(AV)  
IFSM  
10  
A
Junction Temperature  
Tj  
125  
Storage Temperature Range  
Tstg  
-55+150  
*1Non continuous high amplitude 60Hz half-sine wave.  
Cathode Bar  
MARKING RULE  
: 1 (Product Number)  
: Assembly Lot Number  
Unit : mm  
SOD-323A  
PRODUCT NAME  
PRODUCT NAME  
DEVICE ORIENTATION  
XBS104S13R-G  
XBS104S13R  
SOD-323A (Halogen & Antimony free)  
SOD-323A  
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.  
* The device orientation is fixed in its embossed tape pocket.  
ELECTRICAL CHARACTERISTICS  
Ta=25℃  
LIMITS  
TYP.  
0.34  
0.49  
4
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNIT  
MIN.  
MAX.  
VF1  
VF2  
IR  
IF=100mA  
IF=1A  
-
-
-
-
-
-
0.54  
200  
-
V
V
Forward Voltage  
Reverse Current  
VR=40V  
μA  
pF  
Inter-Terminal Capacity  
Reverse Recovery Time *2  
*2trr measurement circuit  
Ct  
VR=10V , f=1MHz  
35  
trr  
IF=IR=10mA , irr=1mA , RL=100Ω  
25  
-
ns  
Bias
Device Under Test  
IF  
trr  
Oscilloscope  
Pulse Generatrix
t
0
irr  
A
IR  
1/3  

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