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XBS013V1DR-G PDF预览

XBS013V1DR-G

更新时间: 2022-03-25 20:27:19
品牌 Logo 应用领域
特瑞仕 - TOREX 二极管
页数 文件大小 规格书
3页 88K
描述
Schottky Barrier Diode, 100mA, 30V Type

XBS013V1DR-G 数据手册

 浏览型号XBS013V1DR-G的Datasheet PDF文件第2页浏览型号XBS013V1DR-G的Datasheet PDF文件第3页 
XBS013V1DR-G  
ETR1618-005  
Schottky Barrier Diode, 100mA, 30V Type  
APPLICATIONS  
Low Current Rectification  
FEATURES  
Ultra Small Package  
Low VF  
PACKAGING INFORMATION  
ABSOLUTE MAXIMUM RATINGS  
Ta=25℃  
PARMETER  
SYMBOL  
VRM  
VR  
RATINGS  
30  
UNITS  
V
0.30±0.05  
0.20±0.03  
Repetitive Peak Voltage  
Reverse Voltage (DC)  
30  
V
Forward Current (Average)  
Peak Forward Surge Current *1  
Junction Temperature  
IF(AV)  
IFSM  
Tj  
100  
mA  
A
0.5  
150  
Storage Temperature Range  
Tstg  
-40+150  
*1) 60Hz Half sine wave, 1 cycle, Non-Repetitive.  
MARKING RULE  
TOP  
BOTTOM  
①:1 (Product Number)  
a,b,c,d,eLot Number  
Unit: mm  
PRODUCT NAME  
PRODUCT NAME  
PACKAGE  
USP-2B01  
XBS013V1DR-G *  
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.  
* The device orientation is fixed in its embossed tape pocket.  
ELECTRICAL CHARACTERISTICS  
Ta=25℃  
LIMITS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNITS  
MIN.  
TYP.  
MAX.  
0.37  
7
Forward Voltage  
Reverse Current  
VF1  
IR  
IF=10mA  
VR=10V  
-
-
-
-
V
μA  
●NOTES ON USE  
1. A package of this IC is a surface mounted package 0603 size with backside electrode structure. Compare to other packages, fixation strength  
for the electrodes is weak due to its structure. Please keep away from mechanical stress to the product when mounting or after mounting.  
2. If the IC is mounted close to a board break line or fixed in screws, the IC or its electrodes may be caused damage as results of board  
deformation and mechanical stress.  
1/3  

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