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XBS013S1CR_12 PDF预览

XBS013S1CR_12

更新时间: 2022-03-25 20:27:16
品牌 Logo 应用领域
特瑞仕 - TOREX 二极管
页数 文件大小 规格书
3页 73K
描述
Schottky Barrier Diode, 100mA, 30V Type

XBS013S1CR_12 数据手册

 浏览型号XBS013S1CR_12的Datasheet PDF文件第2页浏览型号XBS013S1CR_12的Datasheet PDF文件第3页 
XBS013S1CR-G  
ETR1619-004  
Schottky Barrier Diode, 100mA, 30V Type  
APPLICATIONS  
Low Current Rectification  
FEATURES  
Ultra Small Package  
PACKAGING INFORMATION  
Ta=25℃  
ABSOLUTE MAXIMUM RATINGS  
PARMETER  
SYMBOL  
VRM  
VR  
RATINGS  
30  
UNITS  
V
Repetitive Peak Voltage  
Reverse Voltage (DC)  
30  
V
Forward Current (Average)  
Peak Forward Surge Current *1  
Junction Temperature  
IF(AV)  
IFSM  
Tj  
100  
mA  
A
0.6  
125  
Storage Temperature Range  
Tstg  
-55+125  
*1) 60Hz Half sine wave, 1 cycle, Non-Repetitive.  
MARKING RULE  
①:3(Product Number)  
a,b,c,d,e,d,e,f,g,hLot Number  
PRODUCT NAME  
PRODUCT NAME  
PACKAGE  
USP-2B02  
XBS013S1CR-G*  
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.  
* The device orientation is fixed in its embossed tape pocket.  
ELECTRICAL CHARACTERISTICS  
Ta=25℃  
LIMITS  
TYP.  
0.71  
-
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNITS  
MIN.  
MAX.  
Forward Voltage  
Reverse Current  
VF1  
IR  
IF=100mA  
VR=25V  
-
-
1
2
V
μA  
●NOTES ON USE  
1. Please keep away from mechanical stress to the product when mounting or after mounting.  
2. If the IC is mounted close to a board break line or fixed in screws, the IC or its electrodes may be caused damage as results of board  
deformation and mechanical stress.  
1/3  

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