Datasheet > XBS013R1DR-G

XBS013R1DR-G

更新时间： 2022-05-08 16:24:49

品牌	Logo	应用领域
特瑞仕 - TOREX		二极管
页数	文件大小	规格书
3页	87K
描述
Schottky Barrier Diode, 100mA, 30V Type

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XBS013R1DR-G 数据手册

XBS013R1DR-G

ETR1617-005

Schottky Barrier Diode, 100mA, 30V Type

■APPLICATIONS

●Low Current Rectification

■FEATURES

Ultra Small Package

Low IR

■PACKAGING INFORMATION

■ABSOLUTE MAXIMUM RATINGS

Ta=25℃

PARMETER

SYMBOL

VRM

RATINGS

UNITS

0.30±0.05

0.20±0.03

Repetitive Peak Voltage

Reverse Voltage (DC)

Forward Current (Average)

Peak Forward Surge Current ^*1

Junction Temperature

IF(AV)

IFSM

100

0.5

150

℃

Storage Temperature Range

Tstg

-40～+150

*1) 60Hz Half sine wave, 1 cycle, Non-Repetitive.

■MARKING RULE

TOP

BOTTOM

①：2 (Product Number)

a,b,c,d,e：Lot Number

Unit: mm

■PRODUCT NAME

PRODUCT NAME

PACKAGE

USP-2B01

XBS013R1DR-G ^*

^*The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.

^*The device orientation is fixed in its embossed tape pocket.

■ELECTRICAL CHARACTERISTICS

Ta=25℃

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

UNITS

MIN.

TYP.

MAX.

0.46

0.3

Forward Voltage

Reverse Current

VF1

I_F=10mA

V_R=10V

μA

●NOTES ON USE

1. A package of this IC is a surface mounted package 0603 size with backside electrode structure. Compare to other packages, fixation strength

for the electrodes is weak due to its structure. Please keep away from mechanical stress to the product when mounting or after mounting.

2. If the IC is mounted close to a board break line or fixed in screws, the IC or its electrodes may be caused damage as results of board

deformation and mechanical stress.

1/3

12 3

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