Datasheet > XB01SB04A2BR

XB01SB04A2BR

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
特瑞仕 - TOREX		肖特基二极管
页数	文件大小	规格书
4页	113K
描述
Schottky Barrier Diode 1A, 40V Type

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XB01SB04A2BR 数据手册

XB01SB04A2BR

ETR1601_001

Schottky Barrier Diode 1A, 40V Type

■

GENERAL DESCRIPTION

XB01SB04A2BR employs 1A level of a schottky diode in a small package equivalent to SOD-123 package. It is suitable for

compact, low profile circuit designs. By giving the series low VF and low IR characteristics, it minimizes power supply loss.

■FEATURES

1A, 40V Type

■APPLICATIONS

●Rectification of compact DC/DC converter

●Surge absorption caused by counter force of

compact motors

Low VF 0.49V @1A (TYP.)

Low IR 4μA @40V (TYP.)

Small Package : SOD-123

●Energy-saving for notebook PCs, hand-set

●Protection against reverse connection of

battery

■ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

PARAMETER

SYMBOL

RATINGS

UNIT

Repetitive Peak Reverse Voltage

Reverse Voltage (DC)

VRM

Forward Current (Average)

IF(AV)

IFSM

Non Continuous Forward Surge Current*1

Junction Temperature

125

℃

Storage Temperature Range

Tstg

-55~+150

*1: Non continuous high amplitude 60Hz half-sine wave.

■ELECTRICAL CHARACTERISTICS

Ta=25℃

LIMITS

TYP.

PARAMETER

SYMBOL

TEST CONDITIONS

UNITS

MIN.

MAX.

Forward Voltage (DC)

Reverse Current (DC)

trr

IF=1A

VR=40V

－

0.49

0.54

200

μA

Inter-Terminal Capacity

Reverse Recovery Current *2

VR=10V, f=1MHz

－

IF=IR=10mA, irr=1mA, RL=100Ω

Note) 1.This product has a weakness for an electroshock such as electrostatic.

Please be careful of an electrification to human body and an electric leakage in the application.

2. *2: trr measurement circuit

Bias

trr

irr

Oscilloscope

Pulse Generatrix

1/4

12 3 4

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