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0790_XP162A01B5PR PDF预览

0790_XP162A01B5PR

更新时间: 2022-11-25 12:25:15
品牌 Logo 应用领域
特瑞仕 - TOREX /
页数 文件大小 规格书
4页 164K
描述
Power MOS FET

0790_XP162A01B5PR 数据手册

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11S_46XP162A01B5PR 02.9.12 4:19 PM ページ 870  
Power MOS FET  
NP-Channel Power MOS FET  
NDMOS Structure  
■Applications  
GNotebook PCs  
GCellular and portable phones  
GOn-board power supplies  
GLi-ion battery systems  
NLow On-State Resistance: 0.25(max)  
NUltra High-Speed Switching  
NSOT-89 Package  
■General Description  
■Features  
The XP162A01B5PR is a P-Channel Power MOS FET with low on-state  
resistance and ultra high-speed switching characteristics.  
Because high-speed switching is possible, the IC can be efficiently set  
thereby saving energy.  
Low on-state resistance: Rds(on)=0.25(Vgs=-4.5V)  
: Rds(on)=0.4(Vgs=-2.5V)  
Ultra high-speed switching  
Operational Voltage  
: -2.5V  
The small SOT-89 package makes high density mounting possible.  
High density mounting : SOT-89  
■Pin Configuration  
■Pin Assignment  
PIN  
NUMBER  
PIN  
NAME  
FUNCTION  
1
2
3
G
D
S
Gate  
Drain  
Source  
1
2
3
G�  
D�  
S�  
SOT-89�  
(TOP VIEW)�  
■Equivalent Circuit  
■Absolute Maximum Ratings  
11  
Ta=25  
:
PARAMETER  
SYMBOL  
RATINGS  
UNITS  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current (DC)  
Vdss  
Vgss  
Id  
-20  
12  
-2  
V
V
A
A
A
Drain Current (Pulse)  
Reverse Drain Current  
Idp  
-6  
1
2
3
Idr  
-2  
P-Channel MOS FET�  
(1 device built-in)  
Continuous Channel  
Power Dissipation (note)  
Pd  
2
W
Channel Temperature  
Storage Temperature  
Tch  
150  
:
:
Tstg  
-55~150  
Note: When implemented on a ceramic PCB  
870  

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