11S_46XP162A01B5PR 02.9.12 4:19 PM ページ 870
Power MOS FET
NP-Channel Power MOS FET
NDMOS Structure
■Applications
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
NLow On-State Resistance: 0.25Ω (max)
NUltra High-Speed Switching
NSOT-89 Package
■General Description
■Features
The XP162A01B5PR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
Low on-state resistance: Rds(on)=0.25Ω(Vgs=-4.5V)
: Rds(on)=0.4Ω(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage
: -2.5V
The small SOT-89 package makes high density mounting possible.
High density mounting : SOT-89
■Pin Configuration
■Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1
2
3
G
D
S
Gate
Drain
Source
1
2
3
G�
D�
S�
SOT-89�
(TOP VIEW)�
�
■Equivalent Circuit
■Absolute Maximum Ratings
11
Ta=25
:
PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Vdss
Vgss
Id
-20
12
-2
V
V
A
A
A
Drain Current (Pulse)
Reverse Drain Current
Idp
-6
1
2
3
Idr
-2
P-Channel MOS FET�
(1 device built-in)
Continuous Channel
Power Dissipation (note)
Pd
2
W
Channel Temperature
Storage Temperature
Tch
150
:
:
Tstg
-55~150
Note: When implemented on a ceramic PCB
870