Datasheet > 0783_XP161A11A1PR

0783_XP161A11A1PR

更新时间： 2022-11-25 12:25:12

品牌	Logo	应用领域
特瑞仕 - TOREX		/
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4页	135K
描述
Power MOS FET

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11S_38XP161A11A1PR 02.9.12 4:13 PM ページ 838

Power MOS FET

NN-Channel Power MOS FET

NDMOS Structure

■Applications

GNotebook PCs

GCellular and portable phones

GOn-board power supplies

GLi-ion battery systems

NLow On-State Resistance: 0.105Ω (max)

NGate Protect Diode Built-in

NUltra High-Speed Switching

NSOT-89 Package

■General Description

■Features

The XP161A11A1PR is an N-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

Low on-state resistance: Rds(on)=0.065Ω(Vgs=10V)

: Rds(on)=0.105Ω(Vgs=4.5V)

Ultra high-speed switching

Gate Protect Diode Built-in

A gate protect diode is built-in to prevent static damage.

The small SOT-89 package makes high density mounting possible.

Operational Voltage

: 4.5V

High density mounting : SOT-89

■Pin Configuration

■Pin Assignment

NUMBER

NAME

FUNCTION

Gate

Drain

Source

SOT-89�

（TOP VIEW）�

■Equivalent Circuit

■Absolute Maximum Ratings

Ta=25˚C

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Vdss

Vgss

Drain Current (Pulse)

Reverse Drain Current

Idp

Idr

N-Channel MOS FET�

(1 device built-in)

Continuous Channel

Power Dissipation (note)

Channel Temperature

Storage Temperature

Tch

150

˚C

Tstg

-55~150

Note: When implemented on a ceramic PCB

838

12 3 4

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