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0770_XP152A01D8MR PDF预览

0770_XP152A01D8MR

更新时间: 2022-11-25 12:25:08
品牌 Logo 应用领域
特瑞仕 - TOREX /
页数 文件大小 规格书
4页 157K
描述
Power MOS FET

0770_XP152A01D8MR 数据手册

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11S_37XP152A01D8MR 02.9.12 4:12 PM ページ 834  
Power MOS FET  
NP-Channel Power MOS FET  
NDMOS Structure  
■Applications  
GNotebook PCs  
GCellular and portable phones  
GOn-board power supplies  
GLi-ion battery systems  
NLow On-State Resistance: 0.48(max)  
NUltra High-Speed Switching  
NSOT-23 Package  
■General Description  
■Features  
The XP152A01D8MR is a P-Channel Power MOS FET with low on-  
state resistance and ultra high-speed switching characteristics.  
Because high-speed switching is possible, the IC can be efficiently set  
thereby saving energy.  
Low on-state resistance : Rds(on)=0.48(Vgs=-4.5V)  
: Rds(on)=0.80(Vgs=-2.5V)  
Ultra high-speed switching  
Operational Voltage  
: -2.5V  
The small SOT-23 package makes high density mounting possible.  
High density mounting : SOT-23  
■Pin Configuration  
■Pin Assignment  
D
3
PIN NUMBER  
PIN NAME  
FUNCTION  
G�  
S�  
D�  
1
2
3
Gate  
Source  
Drain  
1
2
G
S
SOT-23�  
(TOP VIEW)�  
■Equivalent Circuit  
■Absolute Maximum Ratings  
11  
Ta=25  
:
PARAMETER  
SYMBOL  
RATINGS  
UNITS  
3
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current (DC)  
Vdss  
Vgss  
Id  
-20  
12  
V
V
A
A
A
-0.5  
-1.5  
-0.5  
Drain Current (Pulse)  
Reverse Drain Current  
Idp  
1
2
Idr  
P-Channel MOS FET�  
(1 device built-in)  
Continuous Channel  
Power Dissipation (note)  
Pd  
0.5  
W
Channel Temperature  
Storage Temperature  
Tch  
150  
:
:
Tstg  
-55~150  
Note: When implemented on a ceramic PCB  
834  

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