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CSD86330Q3D PDF预览

CSD86330Q3D

更新时间: 2024-01-12 18:35:16
品牌 Logo 应用领域
德州仪器 - TI 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管PC
页数 文件大小 规格书
16页 1168K
描述
Synchronous Buck NexFET? Power Block

CSD86330Q3D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SON
包装说明:SON-8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95Factory Lead Time:1 week
风险等级:1.74Samacsys Confidence:4
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/414106.1.1.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=414106PCB Footprint:https://componentsearchengine.com/footprint.php?partID=414106
3D View:https://componentsearchengine.com/viewer/3D.php?partID=414106Samacsys PartID:414106
Samacsys Image:https://componentsearchengine.com/Images/9/CSD86330Q3D.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/CSD86330Q3D.jpg
Samacsys Pin Count:12Samacsys Part Category:Integrated Circuit
Samacsys Package Category:OtherSamacsys Footprint Name:CSD86330Q3D-2
Samacsys Released Date:2019-11-25 09:34:04Is Samacsys:N
高边驱动器:NO输入特性:STANDARD
接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码:S-PDSO-N8
JESD-609代码:e3长度:3.3 mm
湿度敏感等级:1功能数量:1
端子数量:8最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装代码:HTSON封装形状:SQUARE
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.5 mm
最大供电电压:22 V标称供电电压:12 V
表面贴装:YES温度等级:MILITARY
端子面层:Matte Tin (Sn)端子形式:NO LEAD
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.3 mm
Base Number Matches:1

CSD86330Q3D 数据手册

 浏览型号CSD86330Q3D的Datasheet PDF文件第2页浏览型号CSD86330Q3D的Datasheet PDF文件第3页浏览型号CSD86330Q3D的Datasheet PDF文件第4页浏览型号CSD86330Q3D的Datasheet PDF文件第5页浏览型号CSD86330Q3D的Datasheet PDF文件第6页浏览型号CSD86330Q3D的Datasheet PDF文件第7页 
CSD86330Q3D  
www.ti.com  
SLPS264A OCTOBER 2010REVISED DECEMBER 2010  
Synchronous Buck NexFET™ Power Block  
1
FEATURES  
DESCRIPTION  
2
Half-Bridge Power Block  
The CSD86330Q3D NexFET™ power block is an  
optimized design for synchronous buck applications  
offering high current, high efficiency, and high  
frequency capability in a small 3.3-mm × 3.3-mm  
outline. Optimized for 5V gate drive applications, this  
product offers a flexible solution capable of offering a  
high density power supply when paired with any 5V  
gate drive from an external controller/driver.  
90% System Efficiency at 15A  
Up To 20A Operation  
High Frequency Operation (Up To 1.5MHz)  
High Density – SON 3.3-mm × 3.3-mm  
Footprint  
Optimized for 5V Gate Drive  
Low Switching Losses  
Ultra Low Inductance Package  
RoHS Compliant  
TEXT ADDED FOR SPACING  
Top View  
VIN  
VIN  
TG  
VSW  
VSW  
VSW  
1
2
3
4
8
7
6
5
Halogen Free  
PGND  
Pb-Free Terminal Plating  
(Pin 9)  
APPLICATIONS  
TGR  
BG  
Synchronous Buck Converters  
P0116-01  
High Frequency Applications  
High Current, Low Duty Cycle Applications  
TEXT ADDED FOR SPACING  
ORDERING INFORMATION  
Multiphase Synchronous Buck Converters  
POL DC-DC Converters  
IMVP, VRM, and VRD Applications  
Device  
Package  
Media  
Qty  
Ship  
SON  
3.3-mm × 3.3-mm  
Plastic Package  
13-Inch  
Reel  
Tape and  
Reel  
CSD86330Q3D  
2500  
TEXT ADDED FOR SPACING  
TEXT ADDED FOR SPACING  
TEXT ADDED FOR SPACING  
TYPICAL POWER BLOCK EFFICIENCY  
and POWER LOSS  
TYPICAL CIRCUIT  
CSD86330Q3D  
Driver IC  
100  
90  
80  
70  
60  
50  
5
4
3
2
1
VDD  
VI  
D1  
VDD  
BST  
DRVH  
LL  
Control  
FET  
G1  
ENABLE  
PWM  
VGS = 5V  
VIN = 12V  
VOUT = 1.3V  
fSW = 500kHz  
LOUT = 1ꢀH  
TA = 25°C  
ENABLE  
PWM  
VO  
G1R  
D2/S1  
Sync  
FET  
G2  
GND  
DRVL  
S2  
S0474-04  
Efficiency  
Power Loss  
0
0
5
10  
15  
20  
Output Current (A)  
G029  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
NexFET is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2010, Texas Instruments Incorporated  

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