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BQ4010MA-70 PDF预览

BQ4010MA-70

更新时间: 2024-02-01 07:29:41
品牌 Logo 应用领域
德州仪器 - TI 存储内存集成电路静态存储器
页数 文件大小 规格书
12页 747K
描述
8Kx8 Nonvolatile SRAM

BQ4010MA-70 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:70 ns其他特性:POWER SUPPLY WRITE PROTECTION
JESD-30 代码:R-XDMA-T28JESD-609代码:e0
内存密度:65536 bit内存集成电路类型:NON-VOLATILE SRAM MODULE
内存宽度:8功能数量:1
端口数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8KX8
输出特性:3-STATE可输出:YES
封装主体材料:UNSPECIFIED封装代码:DIP
封装等效代码:DIP28,.6封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified最大待机电流:0.004 A
子类别:SRAMs最大压摆率:0.075 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BQ4010MA-70 数据手册

 浏览型号BQ4010MA-70的Datasheet PDF文件第2页浏览型号BQ4010MA-70的Datasheet PDF文件第3页浏览型号BQ4010MA-70的Datasheet PDF文件第4页浏览型号BQ4010MA-70的Datasheet PDF文件第5页浏览型号BQ4010MA-70的Datasheet PDF文件第6页浏览型号BQ4010MA-70的Datasheet PDF文件第7页 
bq4010/bq4010Y  
8Kx8 Nonvolatile SRAM  
At t his tim e th e int egr a l ener gy  
Features  
Data retention in the absence of  
General Description  
source is switched on to sustain the  
memory until after VCC returns valid.  
The CMOS bq4010 is a nonvolatile  
65,536-bit static RAM organized as  
8,192 words by 8 bits. The integral  
control circuitry and lithium energy  
source provide reliable nonvolatility  
coupled with th e u nlim ited wr ite  
cycles of standard SRAM.  
power  
The bq4010 uses an extremely low  
s t a n d by cu r r en t CMOS SR AM,  
coupled with a small lithium coin  
cell to provide nonvolatility without  
long write-cycle times and the write-  
cycle lim it a tion s a ssocia ted with  
EEPROM.  
Automatic write-protection  
during power-up/power-down  
cycles  
Industry-standard 28-pin 8K x 8  
pinout  
Th e con t r ol cir cu it r y con st a n t ly  
monitors the single 5V supply for an  
out-of-tolerance condition. When VCC  
falls out of tolerance, the SRAM is  
un conditionally wr ite-protected to  
prevent inadvertent write operation.  
Conventional SRAM operation;  
The bq4010 requires no external cir-  
cuitry and is socket-compatible with  
industry-standard SRAMs and most  
EPROMs and EEPROMs.  
unlimited write cycles  
10-year minimum data retention  
in absence of power  
Battery internally isolated until  
power is applied  
Pin Connections  
Pin Names  
Block Diagram  
A0 –A12  
Address inputs  
DQ0–DQ7 Data input/output  
CE  
Chip enable input  
Output enable input  
Write enable input  
No connect  
OE  
WE  
NC  
VCC  
VSS  
+5 volt supply input  
Ground  
Selection Guide  
Maximum  
Access  
Negative  
Supply  
Maximum  
Access  
Negative  
Supply  
Part  
Part  
Number  
Time (ns)  
Tolerance  
Number  
Time (ns)  
Tolerance  
bq4010Y -70  
bq4010Y -85  
bq4010Y -150  
bq4010Y -200  
70  
85  
-10%  
-10%  
-10%  
-10%  
bq4010 -85  
85  
-5%  
-5%  
-5%  
bq4010 -150  
bq4010 -200  
150  
200  
150  
200  
Sept. 1996 D  
1

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