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2097152 PDF预览

2097152

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
9页 134K
描述
32-BIT DYNAMIC RAM MODULE

2097152 数据手册

 浏览型号2097152的Datasheet PDF文件第2页浏览型号2097152的Datasheet PDF文件第3页浏览型号2097152的Datasheet PDF文件第4页浏览型号2097152的Datasheet PDF文件第5页浏览型号2097152的Datasheet PDF文件第6页浏览型号2097152的Datasheet PDF文件第7页 
TM124BBK32F, TM124BBK32U 1048576 BY 32-BIT DYNAMIC RAM MODULE  
TM248CBK32F, TM248CBK32U 2097152 BY 32-BIT DYNAMIC RAM MODULE  
SMMS649A – DECEMBER 1994 – REVISED JUNE 1995  
Organization  
Presence Detect  
TM124BBK32F . . . 1 048 576 × 32  
TM248CBK32F . . . 2 097 152 × 32  
Performance Ranges:  
ACCESS ACCESS ACCESS READ  
TIME  
TIME  
TIME  
OR  
Single 5-V Power Supply (±10% Tolerance)  
t
t
t
WRITE  
CYCLE  
(MIN)  
RAC  
AA  
CAC  
72-Pin Single-In-Line Memory Module  
(SIMM) for Use With Socket  
(MAX)  
’124BBK32F-60 60 ns  
’124BBK32F-70 70 ns  
’124BBK32F-80 80 ns  
’248CBK32F-60 60 ns  
’248CBK32F-70 70 ns  
’248CBK32F-80 80 ns  
(MAX)  
30 ns  
35 ns  
40 ns  
30 ns  
35 ns  
40 ns  
(MAX)  
15 ns  
18 ns  
20 ns  
15 ns  
18 ns  
20 ns  
110 ns  
130 ns  
150 ns  
110 ns  
130 ns  
150 ns  
TM124BBK32F – Utilizes Two 16-Megabit  
DRAMs in Plastic Small-Outline J-Lead  
(SOJ) Packages  
TM248CBK32F – Utilizes Four 16-Megabit  
DRAMs in Plastic Small-Outline J-Lead  
(SOJ) Packages  
Low Power Dissipation  
Long Refresh Period  
16 ms (1024 Cycles)  
Operating Free-Air Temperature Range  
0°C to 70°C  
All Inputs, Outputs, Clocks Fully TTL  
Compatible  
Gold-Tabbed Versions Available:  
– TM124BBK32F  
– TM248CBK32F  
3-State Output  
Common CAS Control for Eight Common  
Data-In and Data-Out Lines in Four Blocks  
Tin-Lead (Solder) Tabbed Versions  
Available:  
Enhanced Page-Mode Operation With  
CAS-Before-RAS (CBR), RAS-Only, and  
Hidden Refresh  
– TM124BBK32U  
– TM248CBK32U  
description  
TM124BBK32F  
The TM124BBK32F is a 32-megabit dynamic random-access memory (DRAM) organized as four times  
1048576 × 8 in a 72-pin SIMM. The SIMM is composed of two TMS418160DZ, 1 048 576 × 16-bit DRAMs, each  
in a 42-lead plastic SOJ package mounted on a substrate with decoupling capacitors. The TMS418160DZ is  
described in the TMS418160 data sheet. The TM124BBK32F SIMM is available in the single-sided BK-leadless  
module for use with sockets.  
TM248CBK32F  
The TM248CBK32F is a 64-megabit DRAM organized as four times 2 097 152 × 8 in a 72-pin SIMM. The SIMM  
is composed of four TMS418160DZ, 1 048 576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package  
mounted on a substrate with decoupling capacitors. The TMS418160DZ is described in the TMS418160 data  
sheet. The TM248CBK32F SIMM is available in the double-sided BK-leadless module for use with sockets.  
operation  
The TM124BBK32F operates as two TMS418160DZs connected as shown in the functional block diagram and  
Table 1. The TM248CBK32F operates as four TMS418160DZs connected as shown in the functional block  
diagram and Table 1. The common I/O feature dictates the use of early-write cycles to prevent contention on  
D and Q.  
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.  
Copyright 1995, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443  

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