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2N7008-G PDF预览

2N7008-G

更新时间: 2024-02-24 17:48:43
品牌 Logo 应用领域
超科 - SUPERTEX 晶体小信号场效应晶体管开关
页数 文件大小 规格书
3页 394K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

2N7008-G 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:T226-3Reach Compliance Code:not_compliant
风险等级:5.92配置:Single
最大漏极电流 (Abs) (ID):0.15 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.4 W子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

2N7008-G 数据手册

 浏览型号2N7008-G的Datasheet PDF文件第2页浏览型号2N7008-G的Datasheet PDF文件第3页 
2N7008  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Features  
General Description  
The Supertex 2N7008 is an enhancement-mode (normally-  
off) transistor that utilizes a vertical DMOS structure  
and Supertex’s well-proven silicon-gate manufacturing  
process. This combination produces a device with the  
power handling capabilities of bipolar transistors, and the  
high input impedance and positive temperature coefficient  
inherent in MOS devices. Characteristic of all MOS  
structures, this device is free from thermal runaway and  
thermally-induced secondary breakdown.  
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
Low CISS and fast switching speeds  
Excellent thermal stability  
Integral SOURCE-DRAIN diode  
High input impedance and high gain  
Complementary N- and P-Channel devices  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
very low threshold voltage, high breakdown voltage, high  
input impedance, low input capacitance, and fast switching  
speeds are desired.  
Applications  
Motor controls  
Converters  
Amplifiers  
Switches  
Power supply circuits  
Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Ordering Information  
RDS(ON)  
(max)  
(Ω)  
ID(ON)  
(min)  
(mA)  
BVDSS/BVDGS  
(V)  
Device  
Package  
2N7008  
TO-92  
60  
7.5  
500  
2N7008-G  
-G indicates package is RoHS compliant (‘Green’)  
Pin Configuration  
Absolute Maximum Ratings  
Parameter  
Value  
DRAIN to SOURCE voltage  
DRAIN to GATE voltage  
BVDSS  
BVDGS  
GATE to SOURCE voltage  
Operating and storage temperature  
Soldering temperature1  
±±0V  
-55°C to +150°C  
+±00°C  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
S G D  
TO-92  
(front view)  
Note 1. Distance of 1.6mm from case for 10 seconds.  

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