2N7000

更新时间： 2024-02-19 14:11:02

品牌	Logo	应用领域
超科 - SUPERTEX		晶体晶体管开关
页数	文件大小	规格书
4页	30K
描述
N-Channel Enhancement-Mode Vertical DMOS FET

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技术参数
数据手册

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2N7000 技术参数

生命周期：	Obsolete	零件包装代码：	TO-92
包装说明：	CYLINDRICAL, O-PBCY-W3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.82
其他特性：	LOGIC LEVEL COMPATIBLE	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	0.3 A
最大漏源导通电阻：	5 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-226AA	JESD-30 代码：	O-PBCY-W3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	WIRE	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON

2N7000 数据手册

2N7000

N-Channel Enhancement-Mode

Vertical DMOS FET

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

I_D(ON)

BV_DGS

(min)

TO-92

60V

5.0Ω

75mA

2N7000

Features

■ Free from secondary breakdown

■ Low power drive requirement

■ Ease of paralleling

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

■ Low C_ISSand fast switching speeds

■ Excellent thermal stability

■ Integral Source-Drain diode

■ High input impedance and high gain

Supertex’s vertical DMOS FETs are ideally suited to a wide

rangeofswitchingandamplifyingapplicationswherehighbreak-

down voltage, high input impedance, low input capacitance, and

fast switching speeds are desired.

■ Complementary N- and P-channel devices

Applications

■ Motor controls

Package Options

■ Converters

■ Amplifiers

■ Switches

■ Power supply circuits

■ Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 30V

S G D

TO-92

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

7-5

12 3 4

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