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X0105DN

更新时间: 2022-09-11 10:03:55
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4页 79K
描述
Sensitive Gate Silicon Controlled Rectifier

X0105DN 数据手册

 浏览型号X0105DN的Datasheet PDF文件第2页浏览型号X0105DN的Datasheet PDF文件第3页浏览型号X0105DN的Datasheet PDF文件第4页 
N
A
Advance Information  
STC X0105DN  
SCR  
General Purpose  
S
Sensitive Gate  
0.8 AMPERES RMS  
400 VOLTS  
Silicon Controlled Rectifier  
Reverse Blocking Thyristor  
PNPN device designed for line-powered general purpose  
applications such as relay and lamp drivers, small motor controls, gate  
drivers for larger thyristors, and sensing and detection circuits.  
Supplied in a cost effective plastic SOT-223 package.  
G
A
K
Sensitive Gate Allows Direct Triggering by Microcontrollers and  
Other Logic Circuits  
On–State Current Rating of 0.8 Amperes RMS at 80°C  
Surge Current Capability – 10 Amperes  
Immunity to dV/dt – 20 V/µsec Minimum at 110°C  
Glass-Passivated Surface for Reliability and Uniformity  
Blocking Voltage to 400 Volts  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
SOT-223  
Peak Repetitive Off–State Voltage (Note 1.)  
V
DRM,  
400  
Volts  
TO−92 (TO−226)  
(T = *40 to 110°C, Sine Wave, 50 to  
V
RRM  
J
CASE 029  
60 Hz; Gate Open)  
STYLE 10  
PIN ASSIGNMENT  
On-State RMS Current  
(T = 80°C) 180° Conduction Angles  
I
0.8  
10  
Amp  
T(RMS)  
K
Cathode  
Anode  
Gate  
C
A
Peak Non-Repetitive Surge Current  
(1/2 Cycle, Sine Wave, 60 Hz,  
I
Amps  
TSM  
4
G
T = 25°C)  
J
A
Anode  
2
2
Circuit Fusing Consideration (t = 10 ms)  
I t  
0.415  
0.1  
A s  
Forward Peak Gate Power  
P
GM  
Watt  
Watt  
Amp  
Volts  
°C  
(T = 25°C, Pulse Width v 1.0 µs)  
Forward Average Gate Power  
(T = 25°C, t = 20 ms)  
A
P
G(AV)  
0.15  
1.0  
A
Forward Peak Gate Current  
I
GM  
(T = 25°C, Pulse Width v 1.0 µs)  
Reverse Peak Gate Voltage  
(T = 25°C, Pulse Width v 1.0 µs)  
Operating Junction Temperature Range  
A
V
GRM  
5.0  
A
T
J
–40 to  
125  
@ Rate V  
and V  
RRM  
DRM  
Storage Temperature Range  
T
stg  
–40 to  
150  
°C  
(1) V  
DRM  
and V for all types can be applied on a continuous basis. Ratings  
RRM  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant source such that the voltage  
ratings of the devices are exceeded.  
© Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
December, 2000 – Rev. 0  
NCR169D/D  

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