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X0205MN1BA2 PDF预览

X0205MN1BA2

更新时间: 2022-11-26 01:58:17
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可控硅
页数 文件大小 规格书
6页 150K
描述
1.25A SCRs

X0205MN1BA2 数据手册

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X02 Series  
®
SENSITIVE  
1.25A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
1.25  
Unit  
A
G
I
T(RMS)  
K
V
/V  
600 and 800  
50 to 200  
V
DRM RRM  
I
µA  
GT  
DESCRIPTION  
Thanks to highly sensitive triggering levels, the  
X02 SCR series is suitable for all applications  
where the available gate current is limited, such as  
ground fault circuit interruptors, overvoltage  
crowbar protection in low power supplies,  
capacitive ignition circuits, ...  
TO-92  
(X02xxA)  
SOT-223  
(X02xxN)  
Available in though-hole or surface-mount  
packages, these devices are optimized in forward  
voltage drop and inrush current capabilities, for  
reduced power losses and high reliability in harsh  
environments.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current  
(180° conduction angle)  
TO-92  
SOT-223  
TO-92  
TI = 55°C  
T(RMS)  
1.25  
0.8  
A
Ttab = 95°C  
TI = 55°C  
IT  
Average on-state current  
(180° conduction angle)  
(AV)  
A
A
SOT-223  
tp = 8.3 ms  
tp = 10 ms  
Ttab = 95°C  
I
Non repetitive surge peak on-state  
current  
25  
TSM  
Tj = 25°C  
22.5  
²
²
2
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25°C  
2.5  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
Tj = 125°C  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
1.2  
0.2  
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
Tj  
September 2000 - Ed: 3  
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