Datasheet > X0203MA2BL2

X0203MA2BL2

更新时间： 2022-04-10 04:51:26

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
5页	62K
描述
SENSITIVE GATE SCR

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数据手册

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X0203MA2BL2 数据手册

X02xxxA

SENSITIVE GATE SCR

FEATURES

I_T(RMS)= 1.25A

V_DRM= 200V to 800V

Low I_GT< 200 µA

DESCRIPTION

The X02xxxA series of SCRs uses a high

performance TOP GLASS PNPN technology.

These parts are intended for general purpose

applications where low gate sensitivity is required.

TO92

(Plastic)

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

I_T(RMS)

RMS on-state current

Tl= 60°C

1.25

(180° conductionangle)

I_T(AV)

I_TSM

Mean on-state current

(180° conductionangle)

0.8

Non repetitive surge peak on-state current

(T initial = 25°C )

tp = 8.3 ms

tp = 10 ms

22.5

2.5

I²t

A²s

I²t Value for fusing

Critical rate of rise of on-state current

dI/dt

A/µs

I_G= 10 mA

di_G/dt = 0.1 A/µs.

Storage and operating junction temperature range

T_stg

T_j

- 40, + 150

- 40, + 125

°C

Maximum lead temperature for soldering during 10s at

2mm from case

260

Voltage

Symbol

Parameter

Unit

V_DRM

V_RRM

Repetitive peak off-state voltage

T_j= 125°C R_GK= 1KΩ

200

400

600

800

January 1995

1/5

12 3 4 5

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