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X0202NN5BA4 PDF预览

X0202NN5BA4

更新时间: 2024-02-18 01:10:50
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发装置可控硅整流器光电二极管
页数 文件大小 规格书
6页 150K
描述
1.25A SCRs

X0202NN5BA4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.52
其他特性:HIGH RELIABILITY外壳连接:ANODE
配置:SINGLE关态电压最小值的临界上升速率:10 V/us
最大直流栅极触发电流:0.2 mA最大直流栅极触发电压:0.8 V
最大维持电流:5 mAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3最大漏电流:0.5 mA
湿度敏感等级:1通态非重复峰值电流:25 A
元件数量:1端子数量:4
最大通态电流:800 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:1.25 A断态重复峰值电压:800 V
重复峰值反向电压:800 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

X0202NN5BA4 数据手册

 浏览型号X0202NN5BA4的Datasheet PDF文件第2页浏览型号X0202NN5BA4的Datasheet PDF文件第3页浏览型号X0202NN5BA4的Datasheet PDF文件第4页浏览型号X0202NN5BA4的Datasheet PDF文件第5页浏览型号X0202NN5BA4的Datasheet PDF文件第6页 
X02 Series  
®
SENSITIVE  
1.25A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
1.25  
Unit  
A
G
I
T(RMS)  
K
V
/V  
600 and 800  
50 to 200  
V
DRM RRM  
I
µA  
GT  
DESCRIPTION  
Thanks to highly sensitive triggering levels, the  
X02 SCR series is suitable for all applications  
where the available gate current is limited, such as  
ground fault circuit interruptors, overvoltage  
crowbar protection in low power supplies,  
capacitive ignition circuits, ...  
TO-92  
(X02xxA)  
SOT-223  
(X02xxN)  
Available in though-hole or surface-mount  
packages, these devices are optimized in forward  
voltage drop and inrush current capabilities, for  
reduced power losses and high reliability in harsh  
environments.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current  
(180° conduction angle)  
TO-92  
SOT-223  
TO-92  
TI = 55°C  
T(RMS)  
1.25  
0.8  
A
Ttab = 95°C  
TI = 55°C  
IT  
Average on-state current  
(180° conduction angle)  
(AV)  
A
A
SOT-223  
tp = 8.3 ms  
tp = 10 ms  
Ttab = 95°C  
I
Non repetitive surge peak on-state  
current  
25  
TSM  
Tj = 25°C  
22.5  
²
²
2
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25°C  
2.5  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
Tj = 125°C  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
1.2  
0.2  
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
Tj  
September 2000 - Ed: 3  
1/6  

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