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STW7NA100FI PDF预览

STW7NA100FI

更新时间: 2024-02-03 12:37:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
6页 78K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STW7NA100FI 数据手册

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STW7NA100  
STH7NA100FI  
N - CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTORS  
TYPE  
VDSS  
RDS(on)  
ID  
STW7NA100  
STH7NA100FI  
1000 V  
1000 V  
< 1.7 Ω  
< 1.7 Ω  
7 A  
4.3 A  
TYPICAL RDS(on) = 1.45 Ω  
± 30V GATE TO SOURCE VOLTAGE RATING  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
GATE CHARGE MINIMISED  
3
3
2
2
1
REDUCED THRESHOLD VOLTAGE SPREAD  
1
APPLICATIONS  
TO-247  
ISOWATT218  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLY (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STW7NA100 STH7NA100FI  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
1000  
1000  
± 30  
V
V
V
o
Drain Current (continuous) at Tc = 25 C  
7
4.3  
2.7  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
4.4  
28  
A
IDM()  
Ptot  
Drain Current (pulsed)  
28  
A
o
Total Dissipation at Tc = 25 C  
190  
1.52  
70  
W
W/oC  
V
oC  
oC  
Derating Factor  
0.56  
4000  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/6  
March 1998  

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