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STH8NA80 PDF预览

STH8NA80

更新时间: 2024-02-02 14:25:56
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
6页 49K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STH8NA80 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.86
雪崩能效等级(Eas):260 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (Abs) (ID):4.5 A最大漏极电流 (ID):4.5 A
最大漏源导通电阻:1.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):70 W
最大脉冲漏极电流 (IDM):28.8 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON

STH8NA80 数据手册

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STW8NA80  
STH8NA80FI  
N - CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTORS  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
800 V  
800 V  
< 1.50 Ω  
< 1.50 Ω  
7.2 A  
4.5 A  
STW8NA80  
STH8NA80FI  
TYPICAL RDS(on) = 1.3 Ω  
± 30V GATE TO SOURCE VOLTAGE RATING  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW INTRINSIC CAPACITANCES  
GATE GHARGE MINIMIZED  
3
3
2
2
1
1
REDUCED THRESHOLD VOLTAGE SPREAD  
TO-247  
ISOWATT218  
DESCRIPTION  
This series of POWER MOSFETS represents the  
most advanced high voltage technology. The op-  
timized cell layout coupled with a new proprietary  
edge termination concur to give the device low  
RDS(on) and gate charge, unequalled rug-  
gednessand superiorswitching performance.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STW8NA80 STH8NA80FI  
Unit  
VDS  
VDGR  
VGS  
ID  
800  
800  
V
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
± 30  
V
o
7.2  
4.5  
4.5  
2.8  
A
Drain Current (continuous) at Tc = 25 C  
o
ID  
A
Drain Current (continuous) at Tc = 100 C  
I
DM()  
28.8  
175  
1.4  
28.8  
70  
A
Drain Current (pulsed)  
o
Ptot  
W
W/oC  
V
oC  
oC  
Total Dissipation at Tc = 25 C  
0.56  
4000  
Derating Factor  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/6  
October 1998  

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