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STH8NA60FI PDF预览

STH8NA60FI

更新时间: 2024-02-18 06:53:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 128K
描述
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STH8NA60FI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-218包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
风险等级:5.72雪崩能效等级(Eas):480 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):5 A
最大漏极电流 (ID):5 A最大漏源导通电阻:1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-218
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):60 W
最大脉冲漏极电流 (IDM):32 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STH8NA60FI 数据手册

 浏览型号STH8NA60FI的Datasheet PDF文件第2页浏览型号STH8NA60FI的Datasheet PDF文件第3页浏览型号STH8NA60FI的Datasheet PDF文件第4页浏览型号STH8NA60FI的Datasheet PDF文件第5页浏览型号STH8NA60FI的Datasheet PDF文件第6页浏览型号STH8NA60FI的Datasheet PDF文件第7页 
STW8NA60  
STH8NA60FI  
N - CHANNEL ENHANCEMENT MODE  
FAST POWER MOS TRANSISTOR  
TYPE  
VDSS  
RDS(on)  
ID  
STW8NA60  
STH8NA60FI  
600 V  
600 V  
< 1 Ω  
< 1 Ω  
8 A  
5 A  
TYPICAL RDS(on) = 0.92 Ω  
± 30V GATE TO SOURCE VOLTAGE RATING  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
2
1
1
REDUCED THRESHOLD VOLTAGE SPREAD  
TO-247  
ISOWATT218  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STW8NA60 STH8NA60FI  
Unit  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
600  
600  
V
V
V
A
A
A
W
30  
±
o
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
8
5
3.2  
ID  
5.1  
32  
I
DM()  
32  
o
Ptot  
Total Dissipation at Tc = 25 C  
150  
1.2  
60  
Derating Factor  
0.48  
4000  
W/oC  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
V
oC  
oC  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/10  
October 1998  

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