是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-218 | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.72 | 雪崩能效等级(Eas): | 480 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 5 A |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-218 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 60 W |
最大脉冲漏极电流 (IDM): | 32 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
STH8NA60FI | STMICROELECTRONICS | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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STH8NA80 | STMICROELECTRONICS | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
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STH8NA80FI | STMICROELECTRONICS | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
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STH8NB90 | STMICROELECTRONICS | N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT |
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STH8NB90FI | STMICROELECTRONICS | N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT |
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STH-90S-A | HITACHI | Directional Coupler, |
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