是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
包装说明: | D2PAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 17 weeks | 风险等级: | 5.22 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 350 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 11 A | 最大漏极电流 (ID): | 11 A |
最大漏源导通电阻: | 0.45 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 245 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 160 W | 最大脉冲漏极电流 (IDM): | 44 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
STB11NM60N | STMICROELECTRONICS | N-channel 600 V - 0.37 ヘ - 10 A - TO-220 - TO |
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STB11NM60N-1 | STMICROELECTRONICS | N-channel 600V - 0.37ヘ - 10A - TO-220/FP- I/I |
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|
STB11NM60T4 | STMICROELECTRONICS | N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET |
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STB11NM60Z-1 | STMICROELECTRONICS | 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, I2PAK-3 |
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STB11NM60ZT4 | STMICROELECTRONICS | 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 |
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|
STB11NM80 | STMICROELECTRONICS | N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh?Power MOSFET |
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