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M93S46-BN3P PDF预览

M93S46-BN3P

更新时间: 2024-02-20 10:13:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
34页 526K
描述
4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection

M93S46-BN3P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.76
Is Samacsys:N最大时钟频率 (fCLK):2 MHz
JESD-30 代码:R-PDIP-T8JESD-609代码:e3
长度:9.27 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:16
功能数量:1端子数量:8
字数:64 words字数代码:64
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:64X16
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:5.33 mm
串行总线类型:MICROWIRE最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

M93S46-BN3P 数据手册

 浏览型号M93S46-BN3P的Datasheet PDF文件第2页浏览型号M93S46-BN3P的Datasheet PDF文件第3页浏览型号M93S46-BN3P的Datasheet PDF文件第4页浏览型号M93S46-BN3P的Datasheet PDF文件第5页浏览型号M93S46-BN3P的Datasheet PDF文件第6页浏览型号M93S46-BN3P的Datasheet PDF文件第7页 
M93S66, M93S56  
M93S46  
4Kbit, 2Kbit and 1Kbit (16-bit wide)  
MICROWIRE Serial Access EEPROM with Block Protection  
FEATURES SUMMARY  
Industry Standard MICROWIRE Bus  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M93Sx6  
2.5 to 5.5V for M93Sx6-W  
1.8 to 5.5V for M93Sx6-R  
8
Single Organization: by Word (x16)  
Programming Instructions that work on: Word  
or Entire Memory  
1
Self-timed Programming Cycle with Auto-  
Erase  
PDIP8 (BN)  
User Defined Write Protected Area  
Page Write Mode (4 words)  
Ready/Busy Signal During Programming  
Speed:  
8
1MHz Clock Rate, 10ms Write Time  
(Current product, identified by process  
identification letter F or M)  
1
SO8 (MN)  
150 mil width  
2MHz Clock Rate, 5ms Write Time (New  
Product, identified by process  
identification letter W or G)  
Sequential Read Operation  
Enhanced ESD/Latch-Up Behavior  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
TSSOP8 (DS)  
3x3mm body size  
TSSOP8 (DW)  
169 mil width  
April 2004  
1/34  

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