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1538-8 PDF预览

1538-8

更新时间： 2022-11-27 03:24:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管射频微波电子航空
页数	文件大小	规格书
5页	74K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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1538-8 数据手册

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SD1538-08

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

.

DESIGNED FOR HIGH POWER PULSE

IFF, DME, AND TACAN APPLICATIONS

200 W (typ.) IFF 1030 - 1090 MHz

150 W (min.) DME 1025 - 1150 MHz

140 W (typ.) TACAN 960 - 1215 MHz

7.8 dB MIN. GAIN

.

.

.

.

.

.

REFRACTORY GOLD METALLIZATION

.400 x .400 2LFL (M138)

BALLASTING AND LOW THERMAL

RESISTANCE FOR RELIABILITY AND

RUGGEDNESS

hermetically sealed

ORDER CODE

BRANDING

1538-8

SD1538-08

.

30:1 LOAD VSWR CAPABILITY AT

SPECIFIED OPERATING CONDITIONS

.

INPUT AND OUTPUT MATCHED,

COMMON BASE CONFIGURATION

PIN CONNECTION

DESCRIPTION

The SD1538-08 is a gold metallized, silicon NPN

power transistor. The SD1538-08 is designed for

applications requiring high peak power and low

duty cycles such as IFF, DME and TACAN. The

SD1538-08 is packaged in a metal/ceramic pack-

age with internal input/output matching, resulting

in improved broadband performance and low ther-

mal resistance.

1. Collector

2. Base

3. Emitter

4. Base

°

= 25 C)

ABSOLUTE MAXIMUM RATINGS (T

case

Symbol

V_CBO

V_CES

V_EBO

I_C

Parameter

Value

65

Unit

V

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

65

V

3.5

V

11

A

P_DISS

T_J

Power Dissipation

583

+200

W

°

°

Junction Temperature

Storage Temperature

C

C

T_STG

65 to +150

0.30

−

THERMAL DATA

R_TH(j-c)

Junction-Case Thermal Resistance

°C/W

1/5

September 6, 1994

12 3 4 5

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