Datasheet > 1530-8

1530-8

更新时间： 2022-11-27 03:23:37

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管射频微波电子航空
页数	文件大小	规格书
5页	61K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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1530-8 数据手册

SD1530-08

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

DESIGNED FOR HIGH POWER PULSED

IFF, DME, TACAN APPLICATIONS

40 WATTS (typ.) IFF 1030 - 1090 MHz

35 WATTS (min.) DME 1025 - 1150 MHz

25 WATTS (typ.) TACAN 960 - 1215 MHz

9.0 dB MIN. GAIN

REFRACTORY GOLD METALLIZATION

.250 SQ. 2LFL (M105)

EMITTER BALLASTING AND LOW

THERMAL RESISTANCE FOR

RELIABILITY AND RUGGEDNESS

hermetically sealed

ORDER CODE

BRANDING

1530-8

SD1530-08

INFINITE LOAD VSWR CAPABILITY AT

SPECIFIED OPERATING CONDITIONS

INPUT MATCHED, COMMON BASE

CONFIGURATION

PIN CONNECTION

DESCRIPTION

The SD1530-08 is a gold metallized silicon, NPN

power transistor designed for applications requiring

high peak power and low duty cycles such as

IFF, DME and TACAN. The SD1530-08 is pack-

aged in the .250” input matched hermetic stripline

flange package resulting in improved broadband

performance and a low thermal resistance.

1. Collector

2. Base

3. Emitter

= 25 C)

ABSOLUTE MAXIMUM RATINGS (T

case

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

3.5

2.6

P_DISS

T_J

Power Dissipation

87.5

+200

Junction Temperature

Storage Temperature

T_STG

65 to +150

−

THERMAL DATA

R_TH(j-c)

Junction-Case Thermal Resistance

2.0

°C/W

1/5

August 1993

12 3 4 5

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