Datasheet > 1224-10

1224-10

更新时间： 2022-11-27 02:26:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管射频微波
页数	文件大小	规格书
3页	50K
描述
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

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数据手册

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1224-10 数据手册

SD1224-10

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

30 MHz

28 VOLTS

IMD −28 dB

COMMON EMITTER

GOLD METALLIZATION

P_OUT30 W MIN. WITH 18 dB GAIN

.380 4LFL (M113)

epoxy sealed

ORDER CODE

SD1224-10

BRANDING

1224-10

PIN CONNECTION

DESCRIPTION

The SD1224-10 is a 28 V epitaxial silicon NPN

planar transistor designed primarily for SSB com-

munications. This device utilizes emitter ballasting

for improved ruggedness and reliability.

1. Collector

2. Emitter

3. Base

4. Emitter

= 25 C)

ABSOLUTE MAXIMUM RATINGS (T

case

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

4.0

4.5

P_DISS

T_J

Power Dissipation

Junction Temperature

Storage Temperature

+200

T_STG

65 to +150

−

THERMAL DATA

R_TH(j-c)

Junction-Case Thermal Resistance

2.2

°C/W

1/3

October 1992

12 3

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