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M04N60 PDF预览

M04N60

更新时间： 2022-12-17 08:21:55

品牌	Logo	应用领域
司坦森 - STANSON		/
页数	文件大小	规格书
2页	245K
描述
N Channel MOSFET

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M04N60 数据手册

浏览型号M04N60的Datasheet PDF文件第2页

N Channel MOSFET

4.0A

M04N60

ꢀ

ꢀ

ꢀ

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to

a Discrete Fast Recovery Diode

TO-220

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃）

PARAMETERS

Continuous Drain Current

SYMBOL

I_D

MIN

TYP

MAX

3.6

UNITS

A

CONDITION

V_GS=10 V, Ta=25℃

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

V_(BR)DSS

I_DSS

600

V

V_GS= 0 V, I_D= 250 μA

0.1

0.5

100

100

4.0

2.2

mA

V_DS= 600 V, V_GS= 0 V

_DS= 480 V, V_GS= 0 V, T_J= 125℃

V_gsf= 20 V, V_DS= 0 V

V

Gate-Source Leakage Current-Forward

Gate-Source Leakage Current-Reverse

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

I_GSSF

I_GSSR

V_GS(th)

R_DS(on)

g_FS

nA

nA

V

V_gsr= 20 V, V_DS= 0 V

2.0

2.5

V_DS= V_GS, I_D= 250 μA

V_GS= 10 V, I_D= 2.2A *

V_DS= 50 V, I_D= 2.2A *

Ω

S

pF

pF

C_iss

660

86

19

11

13

35

14

V

_DS= 25 V, V_GS= 0 V, f = 1.0 MHz

C_oss

C_rss

t_d(on)

t_r

t_d(off)

t_f

pF

ns

ns

ns

ns

V

_DD= 300 V, I_D=3.6 A, V_GS= 10 V,

Rise Time

Turn-Off Delay Time

Fall Time

R

_G= 12Ω *

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Q_g

Q_gs

Q_gd

31

4.6

17

nC

nC

nC

V_DS= 360 V, I_D= 3.6 A, V_GS= 10 V *

Internal Drain Inductance

L_D

4.5

7.5

nH

Measured from the drain lead 0.25” from package to

center of die

Measured from the source lead 0.25” from package

to source bond pad

Internal Drain Inductance

L_S

nH

Total Power Dispation

Thermal Resistance – Junction to Case

Operating and Storage Temperature

P_D

θ_JC

74

1.7

150

W

℃/W

℃

T_J,T_STG

-55

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward On-Voltage(1)

Forward Turn-On Time

Reverse Recovery Time

V_SD

t_on

t_rr

1.6

V

ns

ns

I_S= 3.6 A, V_GS= 0 V, d_IS/d_t= 100A/µs

**

370

* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%

** Negligible, Dominated by circuit inductance

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294 FAX: (650) 9389295

12

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