Datasheet > M02N60B

M02N60B

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
司坦森 - STANSON		/
页数	文件大小	规格书
5页	222K
描述
N Channel MOSFET

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数据手册

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M02N60B 数据手册

N Channel MOSFET

2.0A

M02N60B

FEATURE

PIN CONFIGURATION

ꢀ Robust High Voltage Temination.

ꢀ Avalanche Energy Specified

ꢀ Source-to Drain Diode Recovery Time

Comparable to a Discrete Fast Recovery Diode

ꢀ Diode is Characterized for Use in Bridge

Circurits

ꢀ I_DSSand V_DS(on) Specified at Elevated

Temperature

1 2 3

1.Gate 2.Drain 3.Source

ABSOLUTE MAXIMUM RATINGS

RATING

SYMBOL VALUE UNIT

Drain to Current - Continuous

- Pulsed

I_D

I_DM

2.0

9.0

Gate-to-Source Voltage – Continue

- Non-repetitive

V_GS

V_GSM

+/-20

+/-40

Total Power Dissipation

TO-251/252

TO-220

P_D

Operating and Storage Temperature Range

T_J, T_STG-55 to 150 ℃

℃

E_AS

Single Pulse Drain-to-Source Avalanche Energy – Tj = 25

Ω)

(V_DD=100V, V_GS= 10V, I_AS= 2A, L = 10mH, R_G= 25

Thermal Resistance – Junction to Case

- Junction to Ambient

1.0

62.5

℃/W

θ_JA

Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds

T_L

260

℃

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294 FAX: (650) 9389295

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