Datasheet > SST49LF080A-33-4C-NH

SST49LF080A-33-4C-NH

更新时间： 2024-02-13 01:45:10

品牌	Logo	应用领域
SST		闪存内存集成电路 PC
页数	文件大小	规格书
49页	570K
描述
8 Mbit LPC Flash

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SST49LF080A-33-4C-NH 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TSSOP, TSSOP32,.56,20	Reach Compliance Code：	compliant
Factory Lead Time：	6 weeks	风险等级：	5.6
最长访问时间：	11 ns	启动块：	TOP
命令用户界面：	YES	数据轮询：	YES
JESD-30 代码：	R-PDSO-G32	JESD-609代码：	e3
内存密度：	8388608 bit	内存集成电路类型：	FLASH
内存宽度：	8	部门数/规模：	256
端子数量：	32	字数：	1048576 words
字数代码：	1000000	最高工作温度：	85 °C
最低工作温度：		组织：	1MX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装等效代码：	TSSOP32,.56,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	并行/串行：	PARALLEL
电源：	3.3 V	认证状态：	Not Qualified
部门规模：	4K	最大待机电流：	0.0001 A
子类别：	Flash Memories	最大压摆率：	0.024 mA
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	OTHER
端子面层：	Matte Tin (Sn) - annealed	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
切换位：	YES	类型：	NOR TYPE
Base Number Matches：	1

SST49LF080A-33-4C-NH 数据手册

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8 Mbit LPC Flash

SST49LF080A

SST49LF080A8 Mbit LPC Flash

Data Sheet

FEATURES:

•

LPC Interface Flash

•

Two Operational Modes

– SST49LF080A: 1024K x8 (8 Mbit)

Conforms to Intel LPC Interface Specification 1.0

Flexible Erase Capability

– Low Pin Count (LPC) Interface mode for

in-system operation

– Parallel Programming (PP) Mode for fast production

•

programming

– Uniform 4 KByte Sectors

•

LPC Interface Mode

– Uniform 64 KByte overlay blocks

– 64 KByte Top Boot Block protection

– Chip-Erase for PP Mode Only

– 5-signal communication interface supporting

byte Read and Write

– 33 MHz clock frequency operation

– WP# and TBL# pins provide hardware write protect

for entire chip and/or top boot block

– Standard SDP Command Set

– Data# Polling and Toggle Bit for End-of-Write

detection

•

Single 3.0-3.6V Read and Write Operations

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Low Power Consumption

– 5 GPI pins for system design flexibility

– 4 ID pins for multi-chip selection

– Active Read Current: 6 mA (typical)

– Standby Current: 10 µA (typical)

•

Parallel Programming (PP) Mode

Fast Sector-Erase/Byte-Program Operation

– 11-pin multiplexed address and 8-pin data

I/O interface

– Supports fast programming In-System on

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time: 16 seconds (typical)

– Single-pulse Program or Erase

– Internal timing generation

programmer equipment

•

CMOS and PCI I/O Compatibility

Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

PRODUCT DESCRIPTION

The SST49LF080A flash memory device is designed to

interface with the LPC bus for PC and Internet Appliance

application in compliance with Intel Low Pin Count (LPC)

Interface Specification 1.0. Two interface modes are sup-

ported: LPC mode for in-system operations and Parallel

Programming (PP) mode to interface with programming

equipment.

has a shorter erase time; the total energy consumed during

any Erase or Program operation is less than alternative

flash memory technologies. The SST49LF080A product

provides a maximum Byte-Program time of 20 µsec. The

entire memory can be erased and programmed byte-by-

byte typically in 16 seconds when using status detection

features such as Toggle Bit or Data# Polling to indicate the

completion of Program operation. The SuperFlash technol-

ogy provides fixed Erase and Program time, independent

of the number of Erase/Program cycles that have per-

formed. Therefore the system software or hardware does

not have to be calibrated or correlated to the cumulative

number of Erase cycles as is necessary with alternative

flash memory technologies, whose Erase and Program

time increase with accumulated Erase/Program cycles.

The SST49LF080A flash memory device is manufactured

with SST’s proprietary, high-performance SuperFlash

Technology. The split-gate cell design and thick-oxide tun-

neling injector attain better reliability and manufacturability

compared with alternate approaches. The SST49LF080A

device significantly improves performance and reliability,

while lowering power consumption. The SST49LF080A

device writes (Program or Erase) with a single 3.0-3.6V

power supply. It uses less energy during Erase and Pro-

gram than alternative flash memory technologies. The total

energy consumed is a function of the applied voltage, cur-

rent and time of application. For any give voltage range, the

SuperFlash technology uses less current to program and

To meet high density, surface mount requirements, the

SST49LF080A device is offered in 32-lead TSOP and 32-

lead PLCC packages. See Figures 1 and 2 for pin assign-

ments and Table 1 for pin descriptions.

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

Intel is a registered trademark of Intel Corporation.

S71235-00-000

4/03

These specifications are subject to change without notice.

12 3 4 5 6 7...49

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与SST49LF080A-33-4C-NH相关器件

型号	品牌	描述	获取价格	数据表
SST49LF080A-33-4C-NHE	SST	8 Mbit LPC Flash	获取价格
SST49LF080A-33-4C-NHE-T	MICROCHIP	SST49LF080A-33-4C-NHE-T	获取价格
SST49LF080A-33-4C-WH	SST	8 Mbit LPC Flash	获取价格
SST49LF080A-33-4C-WHE	SST	8 Mbit LPC Flash	获取价格
SST49LF080A-33-4C-WHE	MICROCHIP	1M X 8 FLASH 3V PROM, 120 ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP-32	获取价格
SST49LF080A-33-4C-WHE-T	MICROCHIP	SST49LF080A-33-4C-WHE-T	获取价格

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