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CXG1210UR PDF预览

CXG1210UR

更新时间: 2024-02-29 18:54:09
品牌 Logo 应用领域
索尼 - SONY 射频和微波开关射频开关微波开关ISM频段
页数 文件大小 规格书
5页 77K
描述
High Power 3P3T Switch with Logic Control

CXG1210UR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:LCC20,.11SQ,16
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N1dB压缩点:32 dBm
其他特性:CMOS COMPATIBLE特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):36.99 dBm
最大插入损耗:0.75 dB最小隔离度:12 dB
JESD-609代码:e6/e4安装特点:SURFACE MOUNT
功能数量:1端子数量:20
最大工作频率:1900 MHz最小工作频率:900 MHz
最高工作温度:85 °C最低工作温度:-35 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:LCC20,.11SQ,16
电源:2.8 V射频/微波设备类型:DIVERSITY SWITCH
子类别:RF/Microwave Switches表面贴装:YES
技术:GAAS端子面层:TIN BISMUTH/PALLADIUM
最大电压驻波比:1.2Base Number Matches:1

CXG1210UR 数据手册

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High Power 3P3T Switch with Logic Control  
CXG1210UR  
Description  
This IC can be used in wireless communication systems, for example, CDMA EV-DO handsets.  
The IC has on-chip logic for operation with 3 CMOS control inputs.  
The Sony JPHEMT process is used for low insertion loss and on-chip logic circuit.  
(Applications: Antenna switch for cellular handsets, CDMA, EVDO)  
Features  
‹ Low insertion loss: 0.3dB@900MHz  
‹ 3 CMOS compatible control line  
Package  
Small package size: 20-pin UQFN  
Structure  
GaAs JPHEMT MMIC  
Absolute Maximum Ratings  
(Ta = 25°C)  
Š Bias voltage  
VDD  
Vctl  
7
5
V
V
Š Control voltage  
Š Operating temperature Topr  
–35 to +85  
°C  
Š Storage temperature  
Š RF input power  
Tstg –60 to +150 °C  
Pin = 37dBm  
This IC is ESD sensitive device. Special handling precautions are required.  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license  
by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating  
the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
E05517  
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