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CXG1134AEN PDF预览

CXG1134AEN

更新时间: 2024-02-29 06:12:03
品牌 Logo 应用领域
索尼 - SONY 射频和微波开关射频开关微波开关光电二极管
页数 文件大小 规格书
4页 115K
描述
High Power SPDT Switch with Logic Control

CXG1134AEN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SOLCC10,.1,16
Reach Compliance Code:unknown风险等级:5.84
1dB压缩点:35 dBm构造:COMPONENT
最大插入损耗:0.5 dB最小隔离度:28 dB
JESD-609代码:e6安装特点:SURFACE MOUNT
功能数量:2端子数量:10
最大工作频率:1900 MHz最小工作频率:900 MHz
最高工作温度:85 °C最低工作温度:-35 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:SOLCC10,.1,16
电源:3 V射频/微波设备类型:SPDT
子类别:RF/Microwave Switches表面贴装:YES
技术:GAAS端子面层:Tin/Bismuth (Sn/Bi)
最大电压驻波比:1.4

CXG1134AEN 数据手册

 浏览型号CXG1134AEN的Datasheet PDF文件第2页浏览型号CXG1134AEN的Datasheet PDF文件第3页浏览型号CXG1134AEN的Datasheet PDF文件第4页 
High Power SPDT Switch with Logic Control  
CXG1134AEN  
Description  
The CXG1134AEN is a high power and high Isolation SPDT switch MMIC. This IC can be used in wireless  
communication systems. The CXG1134AEN can be operated by one CMOS control line. The Sony GaAs J-  
FET process is used for low insertion loss and on-chip logic circuit.  
(Applications : Cellular handsets ; PDC, CDMA)  
Features  
‹ Low insertion loss : 0.25dB @900MHz,  
0.35dB @1.9GHz  
‹ High linearity : IIP3 (typ.) = 70dBm  
‹ 1 CMOS compatible control line  
‹ Small package size : 10-pin VSON  
Package  
10 pin VSON (Plastic)  
Structure  
GaAs J-FET MMIC  
Absolute Maximum Ratings  
°
(Ta = 25 C)  
Š Bias voltage  
VDD  
Vctl  
7
V
V
Š Control voltage  
5
°
Š Operating temperature  
Š Storage temperature  
Topr  
Tstg  
– 35 to + 85  
– 65 to + 150  
C
°
C
This IC is ESD sensitive device. Special handling precautions are required.  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license  
by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating  
the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
E05606-CR  
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