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CXG1111EN PDF预览

CXG1111EN

更新时间: 2024-01-08 14:54:53
品牌 Logo 应用领域
索尼 - SONY 射频和微波射频混频器微波混频器ISM频段局域网
页数 文件大小 规格书
6页 95K
描述
800MHz Band Receive Mixer

CXG1111EN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
构造:COMPONENT最大输入功率 (CW):5 dBm
JESD-609代码:e6/e4最高工作温度:85 °C
最低工作温度:-35 °C射频/微波设备类型:SINGLE BALANCED
端子面层:TIN BISMUTH/PALLADIUMBase Number Matches:1

CXG1111EN 数据手册

 浏览型号CXG1111EN的Datasheet PDF文件第2页浏览型号CXG1111EN的Datasheet PDF文件第3页浏览型号CXG1111EN的Datasheet PDF文件第4页浏览型号CXG1111EN的Datasheet PDF文件第5页浏览型号CXG1111EN的Datasheet PDF文件第6页 
CXG1111EN  
800MHz Band Receive Mixer  
Description  
10 pin VSON (Plastic)  
The CXG1111EN is a mixer MMIC for the Japan  
CDMA cellular. This IC is designed using the Sonys  
GaAs J-FET process.  
Features  
High conversion gain: Gc = 13.0dB (Typ.)  
Low noise figure: NF = 4.5dB (Typ.)  
Low distortion: IIP3 = +2.5dBm (Typ.)  
Small package: 10-pin VSON  
Pin Configuration  
Applications  
J-CDMA, PDC 800MHz and others  
5
4
3
2
1
NC  
6
7
RFIN  
GND  
OPT  
GND  
LOIN  
Structure  
GND  
GND  
GaAs J-FET MMIC  
8
9
VDD1 (LO AMP)  
Absolute Maximum Ratings (Ta = 25°C)  
Supply voltage  
Input power  
VDD  
4.5  
+5  
V
dBm  
°C  
10  
IFOUT/VDD2 (MIX)  
PIN  
Operating temperature Topr  
Storage temperature  
35 to +85  
Tstg 65 to +150  
°C  
Recommended Operating Condition  
Supply voltage  
VDD  
2.7 to 3.3  
V
Block Diagram  
RFIN  
LOIN  
6
1
IFOUT  
10  
Note on handling  
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E00925A1Y-PS  

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