CXG1006N

更新时间： 2024-01-16 16:51:44

品牌	Logo	应用领域
索尼 - SONY		射频和微波开关射频开关微波开关光电二极管
页数	文件大小	规格书
4页	73K
描述
High-Frequency SPDT Antenna Switch

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技术参数
数据手册

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CXG1006N 技术参数

生命周期：	Obsolete	包装说明：	TSSOP8,.25
Reach Compliance Code：	unknown	风险等级：	5.84
1dB压缩点：	32 dBm	特性阻抗：	75 Ω
构造：	COMPONENT	最大插入损耗：	0.8 dB
最小隔离度：	24 dB	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	8
准时：	0.1 µs	最大工作频率：	2000 MHz
最小工作频率：	1000 MHz	最高工作温度：	85 °C
最低工作温度：	-35 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	TSSOP8,.25	电源：	4 V
射频/微波设备类型：	SPDT	子类别：	RF/Microwave Switches
表面贴装：	YES	技术：	GAAS
最大电压驻波比：	1.5	Base Number Matches：	1

CXG1006N 数据手册

CXG1006N

High-Frequency SPDT Antenna Switch

For the availability of this product, please contact the sales office.

Description

8 pin SSOP (Plastic)

The CXG1006N is a high power antenna switch

MMIC. This IC is designed using the Sony's GaAs J-

FET process and operates at a single positive power

supply.

Features

• Single positive power supply operation

• Low insertion loss 0.5dB (Typ.) at 2.0GHz

• High isolation

27dB (Typ.) at 2.0GHz

Absolute Maximum Ratings (Ta = 25°C)

• High power switching

• Control voltage

Vctl

°C

P1dB (Typ.)

32dBm

34dBm

at 2.0GHz

VCTL (H) = 2.0V

at 2.0GHz

• Operating temperature Topr

• Storage temperature Tstg

–35 to +85

–65 to +150

VCTL (H) = 4.0V

Operating Condition

Control voltage

0/4

Application

Antenna switch for digital cellular telephones

Structure

GaAs J-FET MMIC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E95Z31A66-ST

12 3 4

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