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SGC-4363_1 PDF预览

SGC-4363_1

更新时间: 2022-10-23 11:11:24
品牌 Logo 应用领域
SIRENZA /
页数 文件大小 规格书
5页 284K
描述
50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block

SGC-4363_1 数据手册

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SGC-4363Z  
Product Description  
Sirenza Microdevices’ SGC-4363Z is a high performance SiGe HBT MMIC  
amplifier utilizing a Darlington configuration with a patented active bias  
network. The active bias network provides stable current over temperature  
and process Beta variations. Designed to run directly from a 3V supply, the  
SGC-4363Z does not require a dropping resistor as compared to typical  
Darlington amplifiers. The SGC-4363Z is designed for high linearity 3V gain  
block applications that require small size and minimal external components.  
It is internally matched to 50 ohms.  
50-4000 MHzActive Bias Silicon  
Germanium Cascadable Gain Block  
RoHS Compliant  
& Green Package  
Pb  
Gain & Return Loss VD = 3V, ID = 54mA  
Product Features  
30  
Single Fixed 3V Supply  
S21  
20  
No Dropping Resistor Required  
Patented Self-Bias Circuitry  
P1dB = 12.4 dBm at 1950 MHz  
OIP3 = 26.5 dBm at 1950 MHz  
Robust 1000V ESD, Class 1C HBM  
10  
Bias Tee Data, Z  
S
= Z  
L
= 50 Ohms, T  
L
= 25C  
0
-10  
-20  
-30  
S22  
S11  
Applications  
PA Driver Amplifier  
Cellular, PCS, GSM, UMTS, WCDMA  
IF Amplifier  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
Wireless Data, Satellite  
Frequency (GHz)  
Symbol  
Parameters  
Units  
Frequency  
Min.  
Typ.  
Max.  
850 MHz  
1950 MHz  
2400 MHz  
850 MHz  
1950 MHz  
2400 MHz  
850 MHz  
1950 MHz  
2400 MHz  
15.6  
11.2  
17.1  
12.7  
11.8  
13.3  
12.4  
11.8  
28.5  
26.5  
25.5  
18.6  
14.2  
G
Small Signal Gain  
dB  
P1dB  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
dBm  
dBm  
11.4  
24.5  
OIP3  
IRL  
ORL  
NF  
Input Return Loss  
dB  
dB  
1950 MHz  
1950 MHz  
1930 MHz  
9.5  
8.5  
13.5  
12.5  
4.0  
3
Output Return Loss  
Noise Figure  
dB  
5.0  
60  
VD  
Device Operating Voltage  
Device Operating Current  
Thermal Resistance (junction to lead)  
V
ID  
mA  
°C/W  
48  
54  
Rth, j-l  
180  
Test Conditions:  
VD = 3.0V  
ID = 54mA  
TL = 25°C  
ZS = ZL = 50 Ohms  
OIP3 Tone Spacing = 1MHz  
Pout per tone = -5 dBm  
Bias Tee Data  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights  
reserved.  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-104977 Rev C  

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