是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, S-MSFM-P3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.12 |
Is Samacsys: | N | 其他特性: | HIGH RELIABILITY |
外壳连接: | ISOLATED | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 5.3 A |
最大漏极电流 (ID): | 5.3 A | 最大漏源导通电阻: | 0.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-257AB |
JESD-30 代码: | S-MSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 30 W | 最大脉冲漏极电流 (IDM): | 21 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IRFY9120(M) | INFINEON | 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA |
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IRFY9120(M)PBF | INFINEON | 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA |
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IRFY9120C | SEME-LAB | P-Channel MOSFET in a Hermetically sealed |
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IRFY9120M | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5.3A I(D) | TO-220 |
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IRFY9120MPBF | INFINEON | Power Field-Effect Transistor, 5.3A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met |
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IRFY9130 | SEME-LAB | P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
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