Crystal oscillator
Epson Toyocom
CRYSTAL OSCILLATOR
SPXO
SG-645
/
SG-636 series
•Frequency range
•Supply voltage
•Function
:
2.21675 MHz to 135 MHz
2.5 V / 3.3 V / 5.0 V
:
:
:
Output enable(OE) Standby( ST
SG-645:1.5 mm Max.
)
•Thickness
SG-636:2.7 mm Max.
Actual size
SG-645 series
SG-636 series
Specifications (characteristics)
Specifications
Item
Symbol
Remarks
SG-636 PCE
SG-636 SCE
2.21675 MHz
to 40.000 MHz
3.3 V ±0.3 V
SG-636 PTF
SG-636 PH
SG-636 PDE
2.21675 MHz
to 41.000 MHz
41.001 MHz
to 70.000 MHz
2.21675 MHz
to 40.000 MHz
2.5 V ±0.25 V
Output frequency range
f
0
Supply voltage
Storage
VCC
5.0 V ±0.5 V
T_stg
-55 °C to +100 °C
Store as bare product after unpacking
Temperature
temperature
Operating
range
T_use
-20 °C to +70 °C
C: ±100 × 10-6
temperature
Frequency tolerance
Current consumption
Output disable current
Stand-by current
-20 °C to +70 °C
No load condition
OE=GND
f_tol(osc)
ICC
17 mA Max.
10 mA Max.
35 mA Max.
20 mA Max.
9 mA Max.
5 mA Max.
2 µA Max.
5 mA Max.
3 mA Max.
I_dis
I_std
=GND(SCE)
ST
40 % to 60 %
45 % to 55 %
45 % to 55 %
CMOS load:50 % VCC level
TTL load: 1.4 V level
Symmetry
SYM
I
OH=-8 mA(PTF)/-4 mA(PH,SCE,PCE),
/-3.2 mA(PDE)
OL=16 mA(PTF)/4mA(PH,SCE,PCE)
High output voltage
Low output voltage
V
OH
V
CC-0.4 V Min.
I
V
OL
0.4 V Max.
/3.2 mA(PDE)
Output load condition
(TTL)
Output load condition
(CMOS)
L_TTL
10 TTL Max.
50 pF Max.
L_CMOS ≤ 15 pF
20 pF Max.(≤55 MHz)
15 pF Max.(>55 MHz)
L_CMOS
30 pF Max.
15 pF Max.
Output enable /
disable input voltage
V
V
IH
2.0 V Min.
0.8 V Max.
80 % VCC Min.
20 % VCC Max.
5 ns Max.
OE Terminal,
Terminal (SCE)
ST
IL
7 ns Max.
5 ns Max.
4 ms Max.
CMOS load:20 % VCC to 80 % VCC level
TTL load:0.4 V to 2.4 V level
Time at minimum supply voltage to be 0 s
+25 °C, VCC=5.0 V/3.3 V/2.5 V, First year
Output rise and fall time
t
r
/
t
f
Oscillation start up time
Frequency aging
t
OSC
10 ms Max.
±5 × 10-6 / year Max.
4 ms Max.
f_aging
Specifications (characteristics)
Specifications
SG-636 PHG
Item
Symbol
Remarks
SG-636 PCG
SG-636 SCG
SG-636 PTG
Output frequency range
Supply voltage
2.21675 MHz to 33.000 MHz *1
4.5 V to 5.5 V
f
0
V
CC
2.7 V to 3.6 V
Storage
Temperature temperature
T_stg
-55 °C to +100 °C
Store as bare product after unpacking
range
Operating
temperature
T_use
-20 °C to +70 °C
B: ±50 × 10-6 C: ±100 × 10-6
Frequency tolerance
Current consumption
Output disable current
Stand-by current
f_tol(osc)
-20 °C to +70 °C
ICC
25 mA Max.
20 mA Max.
12 mA Max.
10 mA Max.
50 µA Max.
No load condition
OE=GND (PTG,PHG,PCG)
I_dis
I_std
=GND (SCG)
ST
45 % to 55 %
50 % VCC level, L_CMOS=25 pF
1.4 V level, L_CMOS=25 pF
Symmetry
SYM
40 % to 60 %
2.4 V Min.
V
CC-0.4 V Min.
I
OH=-8 mA
OH=-16 mA
OL=8 mA
IOL=16 mA
High output voltage
Low output voltage
VOH
V
CC-0.4 V Min.
I
I
0.4 V Max.
VOL
0.4 V Max.
Output load condition
Output enable /
disable input voltage
L_CMOS
25 pF Max.
VIH
2.0 V Min.
0.8 V Max.
70 % VCC Min.
20 % VCC Max.
4 ns Max.
OE Terminal ,
Terminal
ST
VIL
3.4 ns Max.
12 ms Max.
20 % VCC to 80 % VCC level, L_CMOS ≤ 25 pF
TTL load:0.4 V to 2.4 V level, L_CMOS ≤ 25 pF
t=0 at 90 % VCC
Output rise and fall time
t
r / tf
2.4 ns Max.
Oscillation start up time
Frequency aging
t
OSC
±5 × 10-6 / year Max.
+25 °C, VCC=5.0 V/ 3.3 V, First year
f_aging
*1 4.1250 MHz < f
o
< 4.4336 MHz, 8.2500 MHz < f
o
< 8.8672 MHz, 16.500 MHz < fo < 17.7344 MHz : Unavailable
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